參數(shù)資料
型號: IN4728A
廠商: Fairchild Semiconductor Corporation
英文描述: One Watt Zeners
中文描述: 1瓦齊納基準源
文件頁數(shù): 1/2頁
文件大?。?/td> 22K
代理商: IN4728A
Device
V
Z
(V)
Z
Z
(
)
I
ZT
(mA)
Z
ZK
(
)
I
ZK
(mA)
V
R
(V)
I
R
(
μ
A)
I
SURGE
(mA)
I
ZM
(mA)
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
V
F
Foward Voltage = 1.2 V Maximum @ I
F
= 200 mA for all 1N4700 series
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
10
10
9.0
9.0
8.0
7.0
5.0
2.0
3.5
4.0
4.5
5.0
7.0
8.0
9.0
10
14
16
20
22
23
25
35
40
45
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1,000
1,000
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
100
100
50
10
10
10
10
10
10
10
10
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1,380
1,260
1,190
1,070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
276
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
1N4728A - 1N4752A Series One Watt Zeners
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Tolerance: A = 5%
Electrical Characteristics
TA = 25°C unless otherwise noted
@
@
@
NOTES
:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
**
Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.
Param eter
Value
Units
Storage Tem perature Range
M axim um Junction O perating Tem perature
Lead Tem perature (1/16” from case for 10 seconds)
Total Device Dissipation
Derate above 50
°
C
Therm al resistance Junction to Lead
-65 to +200
+ 200
+ 230
1.0
6.67
53.5
°
C
°
C
°
C
W
m W /
°
C
°
C/W
°
C/W
W
Therm al resistance Junction to Am bient
100
Surge Power**
10
1
DO-41
1997 Fairchild Semiconductor Corporation
1N4700A Rev. B
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