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參數(shù)資料
| 型號： | IMT4T108 |
| 英文描述： | TRANSISTOR | BJT | PAIR | PNP | 120V V(BR)CEO | 50MA I(C) | SC-74 |
| 中文描述： | 晶體管|晶體管|一對|進(jìn)步黨| 120伏特五（巴西）總裁| 50mA的一（c）|律師- 74 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 47K |
| 代理商： | IMT4T108 |
IMT4
Transistors
General purpose (dual transistors)
IMT4
!
Features
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
120
120
5
50
300 (TOTAL)
150
55~
+
150
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
!
Package, marking, and Packaging specifications
IMT4
SMT6
T4
T108
3000
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
!
Equivalent circuit
IMT4
(4) (5)
(6)
(3)
(2)
(1)
!
Electrical characteristics
(Ta=25
°
C)
!
External dimensions
(Units : mm)
IMT4
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
Each lead has same dimensions
(
(
(
0.3Min.
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Min.
120
120
5
180
Typ.
140
Max.
0.5
0.5
820
Unit
V
V
V
μ
A
μ
A
MHz
Conditions
V
CE(sat)
0.5
V
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
100V
V
EB
=
4V
V
CE
=
6V, I
C
2mA
V
CE
=
12V, I
E
=
2mA, f
=
100MHz
I
C
/I
B
=
10mA/
1mA
Transition frequency
Collector-emitter saturation voltage
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
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