參數(shù)資料
型號(hào)： IMT3A
廠商： Rohm CO.,LTD.
英文描述： General purpose (dual transistors)
中文描述： 通用（雙晶體管）
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 58K
代理商： IMT3A
EMT2 / EMT3 / UMT2N / IMT2A / IMT3A
Transistors
General purpose (dual transistors)
EMT2 / EMT3 / UMT2N / IMT2A / IMT3A
!
Features
1) Two 2SA1037AK chips in a EMT or UMT or SMT package.
!
Equivalent circuits
(1)
(2)
(3)
(4) (5)
(6)
(6)
(5)
(4)
(3) (2)
(1)
(1)
(2)
(3)
(4)
(5)
(6)
(6)
(5)
(4)
(3)
(2)
(1)
EMT2 / UMT2N
IMT2A
IMT3A
EMT3
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
6
150
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMT2 / EMT3 / UMT2N
IMT2A / IMT3A
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Package, marking, and packaging specifications
EMT2
EMT6
T2
T2R
8000
EMT3
EMT6
T3
T2R
8000
IMT2A
SMT6
T2
T108
3000
IMT3A
SMT6
T3
T108
3000
UMT2N
UMT6
T2
TR
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
ROHM : EMT6
EMT2 / EMT3
ROHM : UMT6
EIAJ : SC-88
UMT2N
ROHM : SMT6
EIAJ : SC-74
IMT2A / IMT3A
0
1.2
1.6
(1)
(2)
(5)
(6)
(3)
(4)
0
0
0
0
1
1
Each lead has same dimensions
0.1Min.
0
(
2
1
0
0
0
2.1
0
0
1.25
(
0
(
(
(
(
Each lead has same dimensions
(
(
(
0.3Min.
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
Each lead has same dimensions
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
60
50
6
120
Typ.
140
4
Max.
0.1
0.1
0.5
560
5
Unit
V
V
V
μ
A
μ
A
V
MHz
pF
Conditions
Transition frequency
Output capacitance
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
60V
V
EB
=
6V
I
C
/I
B
=
50mA/
5mA
V
CE
=
6V, I
C
=
1mA
V
CE
=
12V, I
E
=
2mA, f
=
100MHz
V
CE
=
12V, I
E
=
0A, f
=
1MHz
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
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參數(shù)描述
IMT3AT108 功能描述:兩極晶體管 - BJT DUAL PNP 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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IMT4-7 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
IMT4-7-F 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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