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參數(shù)資料
| 型號(hào)： | IMISG508APB |
| 英文描述： | Miscellaneous Clock Generator |
| 中文描述： | 雜項(xiàng)時(shí)鐘發(fā)生器 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 159K |
| 代理商： | IMISG508APB |
IMISG501
SYSTEM CLOCK CHIP
March 1996
REDUCED EMI CLOCK GENERATOR
INTERNATIONAL MICROCIRCUITS, INC. 525 LOS COCHES ST.
MILPITAS, CA 95035 TEL: 408-263-6300 FAX 408-263-6571
Page 4 of 8
SWITCHING CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Units
Output Rise and Fall Time Measured at 10% - 90% of
VDD
tTLH, tTHL
-
-
5
ns
Output Rise and Fall Time Measured at 0.8V - 2.0V
tTLH, tTHL
-
-
3
ns
Output Duty Cycles
TsymF1
-
-
45/55
%
Jitter One Sigma
tj1s
-
-
2
% of Fout
Cycle-to-Cycle Jitter with Normal Crystal
tjcc
-
-
50
ps
VDD = 5 + 10%, TA = 0 C to 70 C, CL = 15 pF
OSCILLATOR CHARACTERISTICS
Symbol
Min
Typ
gm
20
80
Characteristic
Transconductance
Max
180
Units
Millimho
s
ohms
pf
pf
Volt
ms
%
ns
Conditions
@ 44.2 Mhz
Output Impedance
Input Capacitance
Output Capacitance
DC Bias Voltage
Start-up Time
Duty Cycle
Input Rise Time OSCin
Zo
Ci
Co
Vb
ts
-
8
3
200
13
6
VDD/2
-
-
-
800
18
9
3.5
2
45/55
20
@ 44.2 Mhz
-
-
-
@ VDD = 4.5V
-
-
1.5
-
-
-
TsymF1
ICLKr
VCO CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Units
Conditions
VCO Gain
Ko
35
55
65
MHz/Volt
F/
V Measured with VCO Control at
2V - 3V
Phase Detector Gain
Kd
100
145
200
μ
A/rad
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| IMISG509XB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Miscellaneous Clock Generator |
| IMISG509XPB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:REDUCED EMI CLOCK CHIP CMOS LSI SPECTRUM SPREAD CLOCK GENERATOR |
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