參數(shù)資料
型號: IMC004FLSP
廠商: INTEL CORP
元件分類: DRAM
英文描述: 4 MegaBaytes Series 2+ Flash Memory Card(4M字節(jié)閃速存儲器卡)
中文描述: 2M X 16 FLASH 12V PROM CARD, 250 ns, XMA68
文件頁數(shù): 9/41頁
文件大小: 575K
代理商: IMC004FLSP
E
SERIES 2+ FLASH MEMORY CARDS
9
Table 1. Series 2+ Flash Memory Card Signals
(Continued)
Pin
Signal
I/O
Function
Active
Pin
Signal
I/O
Function
Active
53
A
22
I
Address Bit 22
61
REG#
I
Attribute
Memory Select
LOW
54
A
23
I
Address Bit 23
62
BVD
2
O
Battery Voltage
Detect 2
55
A
24
I
Address Bit 24
63
BVD
1
O
Battery Voltage
Detect 1
56
A
25
I
Address Bit 25
64
DQ
8
I/O Data Bit 8
57
VS
2
O
Voltage Sense 2
N.C.
65
DQ
9
I/O Data Bit 9
58
RST
I
Reset
HIGH
66
DQ
10
I/O Data Bit 10
59
WAIT#
O
Extend Bus
Cycle
LOW
67
CD
2
#
O
Card Detect 2
LOW
60
RFU
Reserved
68
GND
Ground
Table 2. Series 2+ Flash Memory Card Signal Description
Symbol
Type
Name and Function
A
0
–A
25
INPUT
ADDRESS INPUTS:
Address A
0
through A
25
are address bus lines which
enable direct addressing of up to 64 megabytes of memory on the card.
Signal A
0
is not used in word access mode. A
25
is the most significant bit.
DATA INPUT/OUTPUT:
DQ
0
through DQ
15
constitute the bi-directional data
bus. DQ
15
is the most significant bit.
CARD ENABLE 1 & 2:
CE
1
# enables even bytes, CE
2
# enables odd bytes.
Multiplexing A
0
, CE
1
# and CE
2
# allows 8-bit hosts to access all data on D
0
through D
7
.
OUTPUT ENABLE:
Active low signal gating read data from the memory card.
DQ
0
–DQ
15
INPUT/
OUTPUT
CE
1
#,CE
2
#
INPUT
OE#
INPUT
WE#
INPUT
WRITE ENABLE:
Active low signal gating write data to the memory card.
RDY/BSY#
OUTPUT
READY/BUSY OUTPUT:
Indicates status of internally timed erase or write
activities. A high output indicates the memory card is ready to accept
accesses. A low output indicates that a device in the memory card is busy
with internally timed erase or write activities.
CD
1
#,CD
2
#
OUTPUT
CARD DETECT 1 & 2:
These signals provide for correct memory card
insertion detection. They are positioned at opposite ends of the card to detect
proper alignment. The signals are connected to ground internally on the
memory card, and will be forced low whenever a card is placed in the socket.
The host socket interface circuitry shall supply 10K or larger pull-up resistors
on these signal pins.
WP
OUTPUT
WRITE PROTECT:
Write Protect reflects the status of the Write Protect
switch on the memory card. WP set to high = write protected, providing
internal hardware write lockout to the flash array.
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