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參數(shù)資料
| 型號： | IMB7A |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 47K |
| 代理商： | IMB7A |
IMB7A
Transistors
General purpose (dual digital transistors)
IMB7A
!
Features
1) Two DTA143T chips in a SMT package.
!
Circuit diagram
R
1
R
1
!
External dimensions
(Units : mm)
Each lead has same dimensions
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
ROHM : SMT6
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
300(TOTAL)
150
55~
+
150
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
IMB7A
SMT6
B7
T110
3000
Basic
ordering unit
(pieces)
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min.
50
50
5
100
Typ.
250
Max.
0.5
0.5
600
Unit
V
V
V
μ
A
μ
A
Conditions
V
CE(sat)
R
1
0.3
6.11
V
k
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
V
CE
/I
C
=
5V/
1mA
I
C
/I
B
=
5mA
/
0.25mA
3.29
4.7
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
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