參數(shù)資料
型號(hào)： ILQ66-3
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler DC-IN 4-CH Darlington DC-OUT 16-Pin PDIP
中文描述： Transistor Output Optocouplers Photodarlington Out Quad CTR >400%
文件頁數(shù)： 2/7頁
文件大小： 179K
代理商： ILQ66-3
IL66, ILD66, ILQ66
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 22-Aug-12
2
Document Number: 83638
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
V
RM
I
F
P
diss
6.0
60
100
1.33
V
mA
mW
mW/°C
P
diss
150
2.0
mW
mW/°C
t = 1.0 s
V
ISO
P
tot
P
tot
P
tot
5300
250
400
500
3.3
5.33
6.67
≥
7.0
≥
7.0
175
≥
10
12
≥
10
11
V
RMS
mW
mW
mW
mW/°C
mW/°C
mW/°C
mm
mm
Total package power dissipation
IL66
ILD66
ILQ66
IL66
ILD66
ILQ66
Derate linearly from 25 °C
Creepage distance
Clearance distance
Comparative tracking index
CTI
R
IO
R
IO
T
stg
T
amb
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Ω
Ω
°C
°C
s
Storage temperature
Operating temperature
Lead soldering time at 260 °C
- 55 to + 125
- 55 to + 100
10
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
I
C
= 1.0 mA, I
F
= 0 A
Collector base breakdown voltage (IL66)
Collector emitter leakage current
V
CE
= 50 V, I
F
= 0 A
Capacitance collector emitter
COUPLER
Saturation voltage, collector emitter
I
C
= 10 mA, I
F
= 10 mA
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 20 mA
V
R
= 6.0 V
V
R
= 0 V
V
F
I
R
C
O
1.25
0.1
25
1.5
10
V
μA
pF
BV
CEO
BV
CBO
I
CEO
60
60
V
V
nA
pF
I
C
= 10
μ
A
1.0
3.4
100
V
CE
= 10 V
V
CEsat
0.9
1.0
V
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ILQ66-4 功能描述:晶體管輸出光電耦合器 Photodarlington Out Quad CTR >500% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ66-4X001 功能描述:晶體管輸出光電耦合器 Phototransistor Out Quad CTR > 500% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ66-4X007 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler, Photodarlington Output, with Internal RBE (Single, Dual, Quad Channel)
ILQ66-4X007T 功能描述:晶體管輸出光電耦合器 Phototransistor Out Quad CTR > 500% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ66-4X009 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler, Photodarlington Output, with Internal RBE (Single, Dual, Quad Channel)
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