
Document Number: 83653
www.vishay.com
Revision 17-August-01
2–198
FEATURES
Identical Channel to Channel Footprint
ILD620 Crosses to TLP620-2
ILQ620 Crosses to TLP620-4
Current Transfer Ratio (CTR) at IF= ±5.0 mA
ILD/Q620: 50% Min.
ILD/Q620GB: 100% Min.
Saturated Current Transfer Ratio (CTRSAT)
at IF= ±1.0 mA
ILD/Q620: 60% Typ.
ILD/Q620GB: 30% Min.
High Collector-Emitter Voltage, BVCEO=70 V
Dual and Quad Packages Feature:
– Reduced Board Space
– Lower Pin and Parts Count
– Better Channel to Channel CTR Match
– Improved Common Mode Rejection
Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
Isolation Test Voltage from Double Molded
Package
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Forward Current .........................................±60 mA
Surge Current .............................................. ±1.5 A
Power Dissipation ...................................... 100 mW
Derate from 25
°C .................................. 1.3 mW/°C
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms) ...................... 100 mA
Power Dissipation ...................................... 150 mW
Derate from 25
°C.................................. 2.0 mW/°C
Package
Isolation Test Voltage (t=1.0 sec.) ......... 5300 VRMS
Package Dissipation, ILD620/GB ............. 400 mW
Derate from 25
°C............................... 5.33 mW/°C
Package Dissipation, ILQ620/GB............. 500 mW
Derate from 25
°C............................... 6.67 mW/°C
Creepage..................................................
≥7.0 mm
Clearance ................................................
≥7.0 mm
Isolation Resistance
VIO=500 V, TA=25°C............................... ≥10
12
VIO=500 V, TA=100°C............................ ≥10
11
Storage Temperature .................. –55
°C to +150°C
Operating Temperature .............. –55
°C to +100°C
Junction Temperature ................................... 100
°C
Soldering Temperature
(2.0 mm from case bottom) ...................... 260
°C
V
DE
DESCRIPTION
The ILD/Q620 and ILD/Q620GB are multi-channel input phototransistor
optocouplers that use inverse parallel GaAs IRLED emitters and high gain
NPN silicon phototransistors per channel. These devices are constructed
using over/under leadframe optical coupling and double molded insulation
resulting in a Withstand Test Voltage of 5300 VRMS.
The LED parameters and the linear CTR characteristics combined with the
TRIOS eld-effect process make these devices well suited for AC voltage
detection. The ILD/Q620GB with its low IF guaranteed CTRCEsat minimizes
power dissipation of the AC voltage detection network that is placed in
series with the LEDs. Eliminating the phototransistor base connection pro-
vides added electrical noise immunity from the transients found in many
industrial control environments.
Collector
Emitter
Collector
Emitter
Collector
Emitter
Collector
Emitter
A/K
1
2
3
4
5
6
7
8
16
15
14
13
Collector
Emitter
Collector
Emitter
A/K
1
2
3
4
8
7
6
5
12
11
10
9
K=Cathode
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4
° typ.
.100 (2.54) typ.
10
°
3
°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4
3
2
1
.031 (0.79)
.050 (1.27)
5
6
78
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4
°
.100 (2.54)typ.
10
°
typ.
3
°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin
one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8
7
6
5
4
3
2
1
9
10
11 12
13
14
15
16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
Dimensions in inches (mm)
DUAL CHANNEL
ILD620/620GB
QUAD CHANNEL
ILQ620/620GB
AC Input Phototransistor
Optocoupler