參數(shù)資料
型號(hào): ILQ620-X019
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: Optocoupler - Transistor Output, 4 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 16 PIN
中文描述: Transistor Output Optocouplers Phototransistor Out Quad CTR > 50%
文件頁數(shù): 2/9頁
文件大小: 179K
代理商: ILQ620-X019
ILD620, ILD620GB, ILQ620, ILQ620GB
Vishay Semiconductors
www.vishay.com
Rev. 1.7, 09-Jun-11
2
Document Number: 83653
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
PART
SYMBOL
VALUE
UNIT
I
F
± 60
± 1.5
100
1.3
mA
A
mW
mW/°C
I
FSM
P
diss
BV
CEO
I
C
I
C
P
diss
70
50
100
150
2
V
Collector current
mA
mA
mW
mW/°C
t < 1 s
Power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
Isolation voltage
Total power dissipation
t = 1 s
V
ISO
V
IORM
P
tot
5300
890
250
400
400
5.33
500
500
6.67
7
7
10
12
10
11
V
RMS
V
P
mW
mW
mW
mW/°C
mW
mW
mW/°C
mm
mm
°C
°C
°C
°C
Package dissipation
ILD620
ILD620GB
Derate from 25 °C
Package dissipation
ILQ620
ILQ620GB
Derate from 25 °C
Creepage distance
Clearance distance
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(1)
- 55 to + 150
- 55 to + 100
100
260
2 mm from case bottom
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= ± 10 mA
Forward current
V
R
= ± 0.7 V
Capacitance
V
F
= 0 V, f = 1 MHz
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
V
CE
= 5 V, f = 1 MHz
V
CE
= 24 V
T
A
= 85 °C, V
CE
= 24 V
Thermal resistance, junction to lead
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
I
F
C
O
R
thJL
1
1.15
2.5
25
750
1.3
20
V
μA
pF
K/W
C
CE
I
CEO
I
CEO
R
thJL
6.8
10
2
500
pF
nA
μA
K/W
Collector emitter leakage current
100
50
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