參數(shù)資料
型號： ILQ615-3X009
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： ILD615, ILQ615 Optocoupler, Phototransistor Output (Dual, Quad Channel)
中文描述： Transistor Output Optocouplers Phototransistor Out Quad CTR > 100-200%
文件頁數(shù)： 3/12頁
文件大小： 203K
代理商： ILQ615-3X009
Document Number: 83652
Rev. 1.6, 04-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
3
ILD615, ILQ615
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(1)
Package power dissipation ILD615
Derate linearly from 25 °C
Package power dissipation ILQ615
Derate linearly from 25 °C
Isolation test voltage
Isolation voltage
Total power dissipation
Creepage distance
Clearance distance
T
stg
T
amb
T
j
T
sld
- 55 to + 150
- 55 to + 100
100
260
400
5.33
500
6.67
5300
890
250
7
7
10
12
10
11
°C
°C
°C
°C
mW
mW/°C
mW
mW/°C
V
RMS
V
P
mW
mm
mm
2 mm distance from case bottom
t = 1 s
V
ISO
V
IORM
P
tot
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
ELECTRICAL CHARACTERISTCS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current, -1, -2
Collector emitter leakage current, -3, -4
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Thermal resistance, junction to lead
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match
COUPLER
Capacitance (input to output)
Insulation resistance
Channel to channel isolation
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 10 mA
I
R
= 10 μA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
F
V
BR
I
R
C
O
R
THJL
1
6
1.15
30
0.01
25
750
1.3
V
V
μA
pF
K/W
10
V
CE
= 5 V, f = 1 MHz
V
CE
= 10 V
V
CE
= 10 V
I
CE
= 0.5 mA
I
E
= 0.1 mA
C
CE
I
CEO
I
CEO
BV
CEO
BV
ECO
R
THJL
6.8
2
5
pF
nA
nA
V
V
K/W
50
100
70
7
500
I
F
= 10 mA, V
CE
= 5 V
CTRX/CTRY
1 to 1
2 to 1
V
IO
= 0 V, f = 1 MHz
V
IO
= 500 V, T
A
= 25 °C
C
IO
R
S
0.8
10
14
pF
VAC
10
12
500
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ILQ615-3X009T 功能描述:晶體管輸出光電耦合器 SMD-16 CPL QUAD 100-200% CTR RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ615-3X016 功能描述:晶體管輸出光電耦合器 Phototransistor Out Quad CTR > 100-200% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ615-4 功能描述:晶體管輸出光電耦合器 Phototransistor Out Quad CTR 160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ615-4X001 功能描述:晶體管輸出光電耦合器 Phototransistor Out Quad CTR > 160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ615-4X007 功能描述:晶體管輸出光電耦合器 Phototransistor Out Quad CTR > 160-320% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
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