參數(shù)資料
型號(hào)： ILQ32-X009
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler - Transistor Output, 4 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 16 PIN
中文描述： Transistor Output Optocouplers Photodarlington Out Quad CTR > 500%
文件頁數(shù)： 2/6頁
文件大?。?/td> 173K
代理商： ILQ32-X009
www.vishay.com
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83650
Rev. 1.8, 24-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
ILQ32
Vishay Semiconductors
Optocoupler, Photodarlington Output,
High Gain (Quad Channel)
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TE
S
T CONDITION
INPUT
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25°C
OUTPUT
Collector emitter breakdown
voltage
Collector (load) current
Power dissipation
Derate linearly from 25°C
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Total dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Lead soldering time at 260 °C
PART
S
YMBOL
VALUE
UNIT
V
R
I
F
P
diss
3
V
60
100
1.33
mA
mW
mW/°C
BV
CEO
30
V
I
C
125
150
2
mA
mW
mW/°C
P
diss
t = 1 s
V
ISO
5300
V
RMS
7
7
mm
mm
CTI
175
Isolation resistance
R
IO
R
IO
P
tot
10
12
10
11
500
6.67
ILQ32
ILQ32
mW
mW/°C
°C
°C
s
T
stg
T
amb
- 55 to + 150
- 55 to + 100
10
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TE
S
T CONDITION
INPUT
Forward voltage
I
F
= 10 mA
Reverse current
V
R
= 3 V
Capacitance
V
R
= 0 V
OUTPUT
Collector emitter breakdown
voltage
Breakdown voltage emitter
collector
Collector emitter leakage current
V
CE
= 10 V, I
F
= 0 A
COUPLER
Collector emitter
I
C
= 2 mA, I
F
= 8 mA
Capacitance (input to output)
S
YMBOL
MIN.
TYP.
MAX.
UNIT
V
F
I
R
C
O
1.25
0.1
25
1.5
100
V
μA
pF
I
C
= 100
A, I
F
= 0 A
BV
CEO
30
V
I
E
= 100 μA
BC
ECO
5
10
V
I
CEO
1
100
nA
V
CEsat
C
IO
1
V
pF
0.5
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