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參數(shù)資料
| 型號： | ILD55-X009T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler - Transistor Output, DARLINGTON OUTPUT OPTOCOUPLER |
| 中文描述： | Transistor Output Optocouplers Photodarlington Out Dual CTR > 100% |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 192K |
| 代理商： | ILD55-X009T |
www.vishay.com
2
For technical questions, contact:
optocoupler.answers@vishay.com
Document Number: 83621
Rev. 1.7, 24-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
ILD55, ILQ30, ILQ31, ILQ55
Vishay Semiconductors
Optocoupler, Photodarlington Output,
(Dual, Quad Channel)
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TE
S
T CONDITION
INPUT
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
PART
S
YMBOL
VALUE
UNIT
V
RM
I
F
P
diss
3
V
60
100
1.33
mA
mW
mW/°C
Collector emitter breakdown voltage
ILQ30
ILD55
ILQ55
BV
CEO
BV
CEO
BV
CEO
I
C
P
diss
30
55
55
125
150
2
V
V
V
Collector (load) current
Power dissipation
Derate linearly from 25 °C
COUPLER
mA
mW
mW/°C
Total package power dissipation
ILD55
ILQ30
ILQ31
ILQ55
ILD55
ILQ30
ILQ31
ILQ55
P
tot
P
tot
P
tot
P
tot
400
500
500
500
3.3
6.67
6.67
6.67
5300
7
7
175
mW
mW
mW
mW
mW/°C
mW/°C
mW/°C
mW/°C
V
RMS
mm
mm
Derate linearly from 25 °C
Isolation test voltage
Creepage distance
Clearance distance
Comparative tracking index
Storage temperature
COUPLER
Operating temperature
Lead soldering time at 260 °C
V
ISO
CTI
T
stg
- 55 to + 125
°C
T
amb
- 55 to + 100
10
°C
s
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TE
S
T CONDITION
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Collector emitter leakage current
V
CE
= 10 V, I
F
= 0 A
Collector emitter capacitance
V
CE
= 10 V, f = 1 MHz
COUPLER
Collector emitter saturation voltage
I
C
= 50 mA, I
F
= 50 mA
Isolation test voltage
Isolation resistance
Capacitance (input to output)
S
YMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 20 mA
V
R
= 3 V
V
R
= 0 V
V
F
I
R
C
O
1.25
0.1
25
1.5
10
V
μA
pF
I
C
= 100 μA
BVCEO
I
CEO
CCE
30/55
V
nA
pF
1
100
3.4
V
CEsat
0.9
1
V
5300
V
RMS
pF
R
IO
C
IO
10
12
0.5
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