參數資料
型號: ILD256T
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: Optocoupler AC-IN 2-CH Transistor DC-OUT 8-Pin SOIC N T/R
中文描述: Transistor Output Optocouplers Phototransistor Out Dual CTR >20%
文件頁數: 2/7頁
文件大?。?/td> 102K
代理商: ILD256T
www.vishay.com
2
Document Number 83649
Rev. 1.6, 20-Apr-07
Vishay Semiconductors
ILD256T
For technical support, please contact: optocoupler.answers@vishay.com
Note:
1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
Note:
1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note:
1)
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of prodective circuits.
COUPLER
Isolation voltage, input to output
t = 1.0 s
V
ISO
4000
V
RMS
Total package dissipation
(LED + detector)
Derate linearly from 25 °C
Storage temperature
P
tot
300
mW
4.0
mW/°C
°C
T
stg
T
amb
T
sld
- 55 to + 150
Operating temperature
- 55 to + 100
°C
Soldering temperature at 260 °C
10
sec.
ELECTRICAL CHARACTERISTICS
1)
PARAMETER
INPUT
Forward voltage
TEST CONDITION
PART
SYMBOL
MIN
TYP.
MAX
UNIT
I
F
= ± 10 mA
V
R
= 6.0 V
V
F
I
R
1.2
1.55
V
Reverse current
0.1
100
mA
OUTPUT
Collector-emitter breakdown voltage
I
C
= 10 μA
I
E
= 10 μA
V
CE
= 10 V
BV
CEO
BV
ECO
I
CEO
70
V
Emitter-collector breakdown voltage
7.0
V
Collector-emitter leakage current
COUPLER
Symmetry (CTR at + 10 mA)/(CTR at -10 mA)
Saturation voltage, collector-emitter
5.0
50
nA
0.5
1.0
2.0
0.4
I
F
= ± 16 mA, I
C
= 2.0 mA
V
CEsat
V
CURRENT TRANSFER RATIO
PARAMETER
DC Current Transfer Ratio
TEST CONDITION
I
F
= ± 10 mA, V
CE
= 5.0 V
PART
SYMBOL
CTR
DC
MIN
20
TYP.
MAX
UNIT
%
SAFETY AND INSULATION RATINGS
1)
PARAMETER
Climatic classification (according to IEC 68 part 1)
Comparative tracking index
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage
Clearance
Insulation thickness, reinforced rated
TEST CONDITION
SYMBOL
MIN
TYP.
MAX
UNIT
55/100/21
CTI
175
6000
399
V
560
V
350
mW
150
mA
165
°C
mm
mm
mm
4
4
per IEC60950 2.10.5.1
0.2
ABSOLUTE MAXIMUM RATINGS
1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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