參數(shù)資料
型號： ILD251-X016
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： 2 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER
封裝： 0.400 INCH, ROHS COMPLIANT, DIP-8
文件頁數(shù)： 10/17頁
文件大小： 299K
代理商： ILD251-X016
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83618
336
Rev. 1.5, 10-Dec-08
IL250, IL251, IL252, ILD250, ILD251, ILD252
Vishay Semiconductors
Optocoupler, Phototransistor
Output, AC Input,
with Base Connection
Note
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Forward continuous current
IF
60
mA
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.33
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
30
V
Emitter base breakdown voltage
BVEBO
5V
Collector base breakdown voltage
BVCBO
70
V
Power dissipation single channel
Pdiss
200
mW
Power dissipation dual channel
Pdiss
150
mW
Derate linearly from 25 °C single channel
2.6
mW/°C
Derate linearly from 25 °C dual channel
2mW/°C
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Total dissipation single channel
Ptot
250
mW
Total dissipation dual channel
Ptot
400
mW
Derate linearly from 25 °C single channel
3.3
mW/°C
Derate linearly from 25 °C dual channel
5.3
mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Lead soldering time at 260 °C
10
s
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 10 mA
VF
1.2
1.5
V
OUTPUT
Collector emitter breakdown voltage
IC = 1 mA
BVCEO
30
50
V
Emitter base breakdown voltage
IE = 100 A
BVEBO
710
V
Collector base breakdown voltage
IC = 10 A
BVCBO
70
90
V
Collector emitter leakage current
VCE = 10 V
ICEO
550
nA
COUPLER
Collector emitter saturation voltage
IF = ± 16 mA, IC = 2 mA
VCEsat
0.4
V
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