參數(shù)資料
型號: IL755B
廠商: SIEMENS A G
元件分類: 光電耦合器
英文描述: BIDIRECTIONAL INPUT DARLINGTON OPTOCOUPLER
中文描述: 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
封裝: PLASTIC, DIP-6
文件頁數(shù): 1/2頁
文件大?。?/td> 42K
代理商: IL755B
5–1
FEATURES
Very High Current Transfer Ratio (500% min.)
IL755B-1: 750% at I
F=
2 mA, V
IL755B-2: 1000% at I
F
=1 mA, V
BV
CEO
>60 V
Isolation Test Voltage, 5300 VAC
AC or Polarity Insensitive Inputs
No Base Connection
High Isolation Resistance, 10
Low Coupling Capacitance
Standard Plastic DIP Package
Underwriters Lab Approval #E52744
VDE #0884 Available with Option 1
CE
=5 V
=5 V
CE
RMS
12
DESCRIPTION
The IL755B is a bidirectional input, optically cou-
pled isolator consisting of two Gallium Arsenide
infrared emitters and a silicon photodarlington sen-
sor.
Maximum Ratings
(at 25
°
Emitter (Drive Circuit)
Continuous Forward Current.........................60 mA
Power Dissipation at 25
°
C..........................100 mW
Derate Linearly from 55
°
C ....................1.33 mW/
Detector
Collector-Emitter Breakdown Voltage ..............60 V
Emitter-Collector Breakdown Voltage ..............12 V
Power Dissipation at 25
°
C Ambient...........200 mW
Derate Linearly from 25
°
C ......................2.6 mW/
Package
Isolation Test Voltage
(PK), t=1 sec..................................5300 VAC
Dissipation at 25
°
C.....................................250 mW
Derate Linearly from 25
°
C
Creepage ................................................7 min mm
Clearance................................................7 min mm
Isolation Resistance
T
A
=25
°
C..................................................
T
A
=100
°
C................................................
Storage Temperature
..............–55
Operating Temperature................–55
Lead Soldering Time at 260
C)
°
C
°
C
RMS
(2)
.................3.3 mW/
°
C
10
10
12
11
°
°
C
C
(2)
°
°
C to +150
C to +100
°
C ....................10 sec.
Electrical Characteristics
(T
A
=25
°
C)
Notes:
1. Indicates J EDEC registered data.
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
(1)
V
F
1.25
1.5
V
I
F
=10 mA
Detector
(2)
Breakdown Voltage,
Collector-Emitter
BV
CEO
60
75
V
I
I
C
F
=1 mA,
=0
Leakage Current,
Collector-Emitter
I
CEO
1.0
100
nA
V
I
F
CE
=10 V,
Package
Current Transfer
Ratio
IL755B-1
(2)
IL755B-2
CTR
750
1000
%
%
I
V
I
F
V
F
=
CE
CE
±
2 mA,
=5 V
±
1 mA,
=5 V
Saturation Voltage,
Collector-Emitter
V
CEsat
1.0
V
I
I
C
F
=10 mA,
=
±
10 mA
Turn-On Time
t
on
200
μ
s
V
CC
=10 V
Turn-Off Time
t
off
200
μ
s
I
R
F
=
L
±
=100
2 mA,
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode/
Cathode
Catho e/
Anode
NC
.010 (.25)
.014 (.35)
.114(2.90)
.130 (3.30)
.130 (3.30)
.138 (3.50)
.032 (0.80)
Min.
.300 (7.62)
Typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
6
5
4
1
2
3
18
°
Typ.
.300 (7.62)
.347 (8.82)
4
°
Typ.
pin one
ID.
IL755B
BIDIRECTIONAL INPUT
DARLINGTON OPTOCOUPLER
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