參數(shù)資料
型號: IL66B
廠商: SIEMENS A G
元件分類: 光電耦合器
英文描述: PHOTODARLINGTON OPTOCOUPLER
中文描述: 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
封裝: PLASTIC, DIP-6
文件頁數(shù): 1/2頁
文件大?。?/td> 37K
代理商: IL66B
5–1
FEATURES
Internal RBE for High Stability
High Current Transfer Ratio
at
I
F
=2 mA, V
CE
IL66B-1, 200% min.
IL66B-2, 750% min.
Withstand Test Voltage, 5300 VAC
RMS
No Base Connection
High Isolation Resistance
Standard Plastic DIP Package
Underwriters Lab Approval #E52744
VDE 0884 Available with Option 1
DESCRIPTION
=5 V
The IL66B is an optically coupled isolator employ-
ing a Gallium Arsenide infrared emitter and a silicon
photodarlington detector. Switching can be accom-
plished while maintaining a high degree of isolation
between driving and load circuits. They can be
used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic fields.
Maximum Ratings
(at 25
°
Emitter
Peak Reverse Voltage ........................................6 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25
°
C..........................100 mW
Derate Linearly from 55
°
C ....................1.33 mW/
Detector
Collector-Emitter Breakdown Voltage.............. 60 V
Emitter-Collector Breakdown Voltage................ 5 V
Power Dissipation at 25
°
C Ambient...........200 mW
Derate Linearly from 25
°
C ......................2.6 mW/
Package
Isolation Test Voltage (t=1 sec.)........5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ...............................
V
IO
=500 V, T
A
=100
°
C .............................
Total Dissipation at 25
°
C ............................250 mW
Derate Linearly from 25
°
C ......................3.3 mW/
Creepage Path........................................7 min mm
Clearance Path........................................7 min mm
Storage Temperature....................–55
Operating Temperature................–55
Lead Soldering Time at 260
C)
°
C
°
C
10
12
10
11
°
C
°
C to +150
°
C to +100
°
C
°
C
°
C ....................10 sec.
V
D E
Electrical Characteristics
(T
A
=25
°
C)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
F
1.25
1.5
V
I
F
=10 mA
Reverse Current
I
R
0.01
100
μ
A
V
R
=3.0 V
Capacitance
C
O
25
pF
V
R
=0 V
Detector
Breakdown Voltage
Collector-Emitter
BV
CEO
60
V
I
C
=100
I
F
=0
μ
A,
Leakage Current
Collector-Emitter
I
CEO
1.0
100
nA
V
CE
=50 V,
I
F
Package
Current Transfer Ratio
IL66B-1
IL66B-2
CTR
200
750
1000
%
%
I
F
=2 mA,
V
C
E=5 V
Saturation Voltage
Collector-Emitter
V
CEsat
1.0
V
I
C
=10 mA,
I
F
=10 mA
Turn-On,Turn-Off
Time
t
on
,t
off
200
μ
s
V
CC
=10 V
I
F
R
L
=100
Dimensions in inches (mm)
.010 (.25) typ.
.114 (2.90)
.130 (3.30)
.130 (3.30)
.138 (3.50)
.031 (0.80)
min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one
ID.
6
5
4
1
2
3
18
°
typ.
.300 (7.62)
.347 (8.82)
4
°
typ.
1
2
3
6
5
4
Anode
Cathode
NC
NC
Collector
Emitter
IL66B
PHOTODARLINGTON
OPTOCOUPLER
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IL66B-1X006 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler, Photodarlington Output, With Internal RBE
IL66B-1X016 功能描述:晶體管輸出光電耦合器 Photodarlington Out Single CTR > 200% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
IL66B-2 功能描述:晶體管輸出光電耦合器 Photodarlington Out Single CTR > 750% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk