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參數(shù)資料
| 型號： | IL66B-2 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler - Transistor Output, 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-6 |
| 中文描述： | Transistor Output Optocouplers Photodarlington Out Single CTR > 750% |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 97K |
| 代理商： | IL66B-2 |
www.vishay.com
2
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83639
Rev. 1.5, 09-Nov-05
IL66B
Vishay Semiconductors
Optocoupler, Photodarlington Output,
with Internal RBE
Notes
(1)
T
= 25 °C, unless otherwise specified
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
t = 1.0 s
V
ISO
R
IO
R
IO
P
tot
5300
≥
10
12
≥
10
11
250
3.3
7
7
V
RMS
Ω
Ω
mW
mW/°C
min mm
min mm
°C
°C
°C
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Total dissipation
Derate linearly
Creepage path
Clearance path
Storage temperature
Operating temperature
Solder Temperature
(2)
from 25 °C
T
stg
T
amb
T
sld
- 55 to + 150
- 55 to + 100
260
10 s
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Collector emitter leakage current
COUPLER
Saturation voltage
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 10 mA
V
R
= 3.0 V
V
R
= 0
V
F
I
R
C
O
1.25
0.01
25
1.5
100
V
μA
pF
I
C
= 100 μA
V
CE
= 50 V, I
F
= 0 A
BV
CEO
I
CEO
60
V
nA
1.0
100
I
C
= 10 mA
V
CEsat
1.0
V
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
IL66B-1
IL66B-2
SYMBOL
CTR
CTR
MIN.
200
750
TYP.
MAX.
UNIT
%
%
Current transfer ratio
I
F
= 2.0 mA, V
CE
= 5.0 V
1000
SWITCHING CHARACTERISTICS
PARAMETER
Turn-On, Turn-Off time
TEST CONDITION
V
CC
= 10 V, I
F
= 2 mA, R
L
= 100
Ω
SYMBOL
t
on
, t
off
MIN.
TYP.
MAX.
200
UNIT
μs
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