參數(shù)資料
型號(hào): IL250
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: Optocoupler AC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP
中文描述: Transistor Output Optocouplers Phototransistor Out Single CTR >50%
文件頁數(shù): 2/7頁
文件大小: 139K
代理商: IL250
IL250, IL251, IL252, ILD250, ILD251, ILD252
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 12-Apr-13
2
Document Number: 83618
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Power dissipation single channel
Power dissipation dual channel
Derate linearly from 25 °C single channel
Derate linearly from 25 °C dual channel
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
TEST CONDITION
SYMBOL
VALUE
UNIT
I
F
60
100
1.33
mA
mW
mW/°C
P
diss
BV
CEO
BV
EBO
BV
CBO
P
diss
P
diss
30
5
70
200
150
2.6
2
V
V
V
mW
mW
mW/°C
mW/°C
V
ISO
5300
V
RMS
7
7
10
12
10
11
250
400
3.3
5.3
mm
mm
mW
mW
mW/°C
mW/°C
°C
°C
s
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
P
tot
P
tot
Total dissipation single channel
Total dissipation dual channel
Derate linearly from 25 °C single channel
Derate linearly from 25 °C dual channel
Storage temperature
Operating temperature
Lead soldering time at 260 °C
T
stg
T
amb
- 55 to + 150
- 55 to + 100
10
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
I
F
= ± 16 mA, I
C
= 2 mA
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= ± 10 mA
V
F
1.2
1.5
V
I
C
= 1 mA
I
E
= 100 μA
I
C
= 10 μA
V
CE
= 10 V
BV
CEO
BV
EBO
BV
CBO
I
CEO
30
7
70
50
10
90
5
V
V
V
nA
50
V
CEsat
0.4
V
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