
Optocoupler, Phototransistor Output,
Low Input Current, with Base Connection
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83616
324
Rev. 1.9, 08-May-08
IL215AT/216AT/217AT
Vishay Semiconductors
DESCRIPTION
The IL215AT/IL216AT/IL217AT are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon NPN
phototransistor. Signal information, including a DC level, can
be transmitted by the device while maintaining a high degree
of electrical isolation between input and output. The
IL215AT/IL216AT/IL217AT comes in a standard SOIC-8
small outline package for surface mounting which makes it
ideally suited for high density applications with limited space.
In addition to eliminating through hole requirements, this
package conforms to standards for surface mounted
devices.
The high CTR at low input current is designed for low power
consumption requirements such as CMOS microprocessor
interfaces.
FEATURES
High current transfer ratio
Isolation test voltage, 4000 VRMS
Industry standard SOIC-8 surface mountable
package
Compatible with dual wave, vapor phase and
IR reflow soldering
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
UL1577, file no. E52744 system code Y
CUL - file no. E52744, equivalent to CSA bulletin 5A
DIN EN 60747-5-5 available with option 1
i179002
1
2
3
4
A
K
NC
8
7
6
5
NC
B
C
E
ORDER INFORMATION
PART
REMARKS
IL215AT
CTR > 20 %, SOIC-8
IL216AT
CTR > 50 %, SOIC-8
IL217AT
CTR > 100 %, SOIC-8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Peak reverse voltage
VR
6.0
V
Forward continuous current
IF
60
mA
Power dissipation
Pdiss
90
mW
Derate linearly from 25 °C
1.2
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
30
V
Emitter collector breakdown voltage
BVECO
7.0
V
Collector base breakdown voltage
BVCBO
70
V
ICMAX DC
50
mA
ICMAX
t < 1.0 ms
ICMAX
100
mA
Power dissipation
Pdiss
150
mW
Derate linearly from 25 °C
2.0
mW/°C