參數(shù)資料
型號(hào): IL212AT
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin SOIC N T/R
中文描述: Transistor Output Optocouplers Phototransistor Out Single CTR >50%
文件頁數(shù): 2/7頁
文件大?。?/td> 124K
代理商: IL212AT
www.vishay.com
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83615
Rev. 1.9, 21-Dec-10
IL211AT, IL212AT, IL213AT
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8 Package
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
Total package dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Soldering time
V
ISO
P
tot
4000
240
3.2
V
RMS
mW
mW/°C
°C
°C
s
LED and detector
T
stg
T
amb
- 55 to + 150
- 55 to + 100
10
at 260 °C
ELECTRICAL CHARACTERISTCS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 10 mA
Reverse current
V
R
= 6 V
Capacitance
V
R
= 0 V
OUTPUT
Collector emitter breakdown voltage
I
C
= 10 μA
Emitter collector breakdown voltage
I
E
= 10 μA
Collector dark current
V
CE
= 10 V
Collector emitter capacitance
V
CE
= 0 V
COUPLER
Saturation voltage, collector emitter
I
F
= 10 mA
Isolation test voltage
1 s
Capacitance (input to output)
Resistance (input to output)
Collector emitter breakdown voltage
I
C
= 10 μA
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
I
R
C
O
1.3
0.1
13
1.5
100
V
μA
pF
BV
CEO
BV
ECO
I
CEO
C
CE
30
7
V
V
nA
pF
5
50
10
V
CEsat
V
ISO
C
IO
R
IO
BV
CEO
0.4
V
4000
V
RMS
pF
G
Ω
V
0.5
100
50
30
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
IL211AT
IL212AT
IL213AT
SYMBOL
CTR
CTR
CTR
MIN.
20
50
100
TYP.
50
80
130
MAX.
UNIT
%
%
%
Current transfer ratio
I
F
= 10 mA, V
CE
= 5 V
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
I
C
= 2 mA, R
L
= 100
Ω
,
V
CC
= 10 V
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Switching time
t
on
, t
off
3
μs
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
相關(guān)PDF資料
PDF描述
IL211AT Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin SOIC N T/R
IL213AT Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin SOIC N T/R
IL207AT Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin SOIC N T/R
IL2 Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP
IL5 Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP
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IL213AT 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR >100% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk