參數(shù)資料
型號(hào)： IL211A
廠商： SIEMENS A G
元件分類(lèi)： 光電耦合器
英文描述： PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
中文描述： 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝： SOIC-8
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 46K
代理商： IL211A
5–1
FEATURES
High Current Transfer Ratio
IL211A—20% Minimum
IL212A—50% Minimum
IL213A—100% Minimum
Isolation Voltage, 2500 VAC
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
RMS
The IL211A/212A/213A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL211A//212A/213A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
I
F
=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25
°
C............................90 mW
Derate Linearly from 25
°
C ......................1.2 mW/
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................7 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25
°
C2.0 mW/
Package
Total Package Dissipation at 25
(LED + Detector) ....................................280 mW
Derate Linearly from 25
°
C ......................3.3 mW/
Storage Temperature ...................–55
Operating Temperature ...............–55
Soldering Time at 260
°
C .............................10 sec.
°
C
°
C
°
C Ambient
°
°
°
C
C
C
°
°
C to +150
C to +100
NEW
Characteristics
(
T
A
=25
°
C)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
F
1.3
1.5
V
I
F
=10 mA
Reverse Current
I
R
0.1
100
μ
A
V
R
=6.0 V
Capacitance
C
O
25
pF
V
R
=0
Detector
Breakdown Voltage
B
B
VCEO
VECO
30
7
V
V
I
I
C
E
=10
=10
μ
A
A
μ
Dark Current,
Collector-Emitter
I
CEOdark
5
50
nA
V
I
F
CE
=10 V
Capacitance,
Collector-Emitter
C
CE
10
pF
V
CE
=0
Package
DC Current Transfer
Ratio
IL211A
IL212A
IL213A
CTR
DC
20
50
100
50
80
130
%
I
V
F
=10 mA,
CE
=5 V
Saturation Voltage,
Collector-Emitter
V
CEsat
0.4
I
I
F
C
=10 mA,
=2.0 mA
Isolation Test
Voltage
V
IO
2500
VAC
RMS
Capacitance,
Input toOutput
C
IO
0.5
pF
Resistance,
Input to Output
R
IO
100
G
Switching Time
t
on
,t
off
3.0
μ
s
I
R
V
C
=2 mA,
E
=100
CE
=10 V
,
Dimensions in inches (mm)
40
°
.240
(6.10)
.154
±
.005
(3.91
±
.13)
.050 (1.27)
typ.
.021 (.53)
.016 (.41)
.192
±
.005
(4.88
±
.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
±
.0015 (.04)
max.
.015
±
.002
(.38
±
.05)
.008 (.20)
7
°
.058
±
.005
(1.49
±
.13)
.125
±
.005
(3.18
±
.13)
Pin One ID
.120
±
.005
(3.05
±
.13)
CL
5
°
max.
R.010
(.25) max.
.020
±
.004
(.15
±
.10)
2 plcs.
1
2
3
4
Anode
Cathode
NC
NC
8
7
6
5
NC
Base
Collector
Emitter
IL211A/212A/213A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
相關(guān)PDF資料
PDF描述
IL212A PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
IL213A PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
IL215 PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
IL215A PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IL211T 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Optoelectronic
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