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參數(shù)資料
| 型號(hào)： | IL1207AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin SOIC N |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out CTR 100-200% |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 141K |
| 代理商： | IL1207AT |
www.vishay.com
302
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83549
Rev. 1.7, 08-May-08
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
Notes
(1)
T
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC).
Fig. 1 - Input Power Dissipation (LED) vs. Ambient Temperature
Fig. 2 - Output Power Dissipation vs. Ambient Temperature
Note
T
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
Operating temperature
Total package dissipation (LED and detector)
Storage temperature
V
ISO
T
amb
P
tot
T
stg
4000
V
RMS
°C
mW
°C
- 55 to + 110
240
- 55 to + 150
Soldering temperature
(2)
max. 10 s, dip soldering distance
to seating plane
≥
1.5 mm
T
sld
260
°C
Derate linearly from 25 °C
2.4
mW/°C
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
0 10 20 30 40 50 60 70
8
0 90100110 120
T
am
b
(°C)
0
10
20
30
40
50
60
70
8
0
90
100
L
w
e
d
W
)
0 10 20 30 40 50 60 70
8
0 90 100 110 120
T
am
b
(°C)
0
10
20
30
40
50
60
70
8
0
90
100
O
u
t
u
t
w
e
d
W
)
110
120
130
140
150
160
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter leakage current
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown current
Saturation voltage, collector emitter
COUPLER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 10 mA
V
R
= 6 V
V
R
= 0 V
V
F
I
R
C
I
1.3
0.1
13
1.5
100
V
μA
pF
V
CE
= 10 V
I
C
= 100 μA
I
E
= 100 μA
I
CEO
BV
CEO
BV
ECO
BV
CBO
V
CEsat
5.0
50
nA
V
V
V
V
70
7.0
70
10
I
C
= 2 mA, I
F
= 10 mA
0.4
DC current transfer ratio
I
F
= 10 mA, V
CE
= 5.0 V
IL1205AT
IL1206AT
IL1207AT
IL1208AT
IL1205AT
IL1206AT
IL1207AT
IL1208AT
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
C
IO
40
63
100
100
13
22
34
56
80
125
200
320
%
%
%
%
%
%
%
%
pF
I
F
= 1.0 mA, V
CE
= 5.0 V
25
40
60
95
0.5
Capacitance (input to output)
相關(guān)PDF資料 |
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| IL1205AT | IL1205AT/1206AT/1207AT/1208AT - Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated |
| IL1206AT | IL1205AT/1206AT/1207AT/1208AT - Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated |
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