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參數(shù)資料
| 型號： | IL1-X016 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR > 20% |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 125K |
| 代理商： | IL1-X016 |
Document Number: 83612
Rev. 1.6, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
295
IL1, IL2, IL5
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
Notes
(1)
T
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
T
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Package power dissipation
Derate linearly from 25 °C
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
P
tot
250
3.3
mW
mW/°C
V
ISO
5300
V
RMS
≥
7
≥
7
mm
mm
CTI
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
≥
10
12
≥
10
11
Ω
Ω
°C
°C
°C
°C
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(2)
- 40 to + 150
- 40 to + 100
100
260
2.0 mm from case bottom
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance junction to lead
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Collector emitter leakage voltage
Collector emitter saturation voltage
Base emitter voltage
DC forward current gain
DC forward current gain saturated
Thermal resistance junction to lead
COUPLER
Capacitance (input to output)
Insulation resistance
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 60 mA
I
R
= 10 μA
V
R
= 6.0 V
V
F
V
BR
I
R
C
O
R
thjl
1.25
30
0.01
40
750
1.65
V
V
μA
pF
K/W
6
10
V
R
= 0 V, f = 1.0 MHz
V
CE
= 5.0 V, f = 1.0 MHz
V
CB
= 5.0 V, f = 1.0 MHz
V
EB
= 5.0 V, f = 1.0 MHz
V
CE
= 10 V
I
CE
= 1.0 mA, I
B
= 20 μA
V
CE
= 10 V, I
B
= 20 μA
V
CE
= 10 V, I
B
= 20 μA
V
CE
= 0.4 V, I
B
= 20 μA
C
CE
C
CB
C
EB
I
CEO
V
CEsat
V
BE
h
FE
h
FEsat
R
thjl
6.8
8.5
11
5
0.25
0.65
650
400
500
pF
pF
pF
nA
V
V
50
200
120
1800
600
K/W
V
I-O
= 0 V, f = 1.0 MHz
V
I-O
= 500 V
C
IO
R
S
0.6
10
14
pF
Ω
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