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參數(shù)資料
| 型號(hào)： | IKW50N60T |
| 廠(chǎng)商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管 |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大?。?/td> | 416K |
| 代理商： | IKW50N60T |
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Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
TrenchStop Series
IKW50N60T
q
Power Semiconductors
3
Rev. 2.1 Dec-04
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
26
29
299
29
1.2
1.4
2.6
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=50A,
V
GE
=0/15V,
R
G
= 7
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=103nH,
1)
=39pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
143
1.8
27.7
671
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=25
°
C,
V
R
=400V,
I
F
=50A,
di
F
/dt
=1280A/
μ
s
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
27
33
341
55
1.8
1.8
3.6
-
-
-
-
-
-
-
ns
T
j
=175
°
C,
V
CC
=400V,
I
C
=50A,
V
GE
=0/15V,
R
G
= 7
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=103nH,
1)
=39pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
205
4.3
40.7
449
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=175
°
C
V
R
=400V,
I
F
=50A,
di
F
/dt
=1280A/
μ
s
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IKW50N60T_08 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology |
| IKW50N60TA | 功能描述:IGBT 晶體管 600V 50A 100nA RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKW50N60TAFKSA1 | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 80A 333W TO247-3 |
| IKW50N60TAXK | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube |
| IKW50N60TFKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 80A 333W TO247-3 |
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