參數資料
型號： IKW25T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： TRENCHSTOP SERIES
中文描述： TRENCHSTOP系列
文件頁數： 4/15頁
文件大小： 450K
代理商： IKW25T120
IKW25T120
^
TrenchStop Series
Power Semiconductors
4
Preliminary / Rev. 1 Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
50
32
660
130
3.0
4.0
7.0
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=600V,
I
C
=25A,
V
GE
=-15/15V,
R
G
= 22
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=39pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
320
5.2
29
320
-
-
-
ns
μC
A
A/
μ
s
T
j
=150
°
C
V
R
=600V,
I
F
=25A,
di
F
/dt
=800A/
μ
s
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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PDF描述
IKW40T120 LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
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相關代理商/技術參數
參數描述
IKW25T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKW25T120FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 50A 190W TO247-3
IKW30N60H3 功能描述:IGBT 晶體管 600V 30A 187W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW30N60H3FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 60A 187W TO247-3
IKW30N60H3XK 制造商:Infineon Technologies AG 功能描述:
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