參數(shù)資料
型號： IKW15T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE
中文描述： 低損耗DUOPACK：在戰(zhàn)壕和場終止技術(shù)IGBT的軟，恢復快，抗何并行快恢復二極管
文件頁數(shù)： 11/15頁
文件大?。?/td> 450K
代理商： IKW15T120
IKW15T120
^
TrenchStop Series
Power Semiconductors
11
Preliminary / Rev. 1 Jul-02
t
r
,
R
200A/μs
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=600V,
I
F
=15A,
Dynamic test circuit in Figure E)
400A/μs
600A/μs
800A/μs
0ns
100ns
200ns
300ns
400ns
500ns
600ns
T
J
=25°C
T
J
=150°C
Q
r
,
R
200A/μs
400A/μs
600A/μs
800A/μs
0μC
1μC
2μC
3μC
T
J
=25°C
T
J
=150°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
=600V,
I
F
=15A,
Dynamic test circuit in Figure E)
I
r
,
R
200A/μs
400A/μs
600A/μs
800A/μs
0A
5A
10A
15A
20A
25A
30A
T
J
=25°C
T
J
=150°C
d
r
/
,
D
O
200A/μs
400A/μs
600A/μs
800A/μs
-0A/μs
-100A/μs
-200A/μs
-300A/μs
T
J
=25°C
T
J
=150°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(
V
R
=600V,
I
F
=15A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(
V
R
=600V,
I
F
=15A,
Dynamic test circuit in Figure E)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKW15T120 E8161 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW15T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:TrenchStop Series
IKW15T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 110W TO247-3
IKW20N60H3 功能描述:IGBT 晶體管 600V 20A 170W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW20N60H3FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 40A 170W TO247-3
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