- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360841 > IKW08T120 ?8A 1200V TO247 IGBT+Diode? PDF資料下載
參數(shù)資料
| 型號(hào)： | IKW08T120 |
| 英文描述： | ?8A 1200V TO247 IGBT+Diode? |
| 中文描述： | ？8A條1200伏TO247 IGBT的二極管？ |
| 文件頁(yè)數(shù)： | 1/15頁(yè) |
| 文件大?。?/td> | 448K |
| 代理商： | IKW08T120 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)
IKW08T120
^
TrenchStop Series
Power Semiconductors
1
Preliminary / Rev. 1 Jul-02
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Approx. 1.0V reduced V
CE(sat)
and 0.5V reduced V
F
compared to BUP305D
Short circuit withstand time – 10
μ
s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Package
Ordering Code
IKW08T120
1200V
8A
1.7V
150
°
C
TO-247AC
Q67040-S4514
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
1200
V
A
16
8
I
Cpuls
-
24
24
I
F
16
8
I
Fpuls
V
GE
t
SC
24
±
20
10
V
μ
s
P
tot
70
W
T
j
T
stg
-
-40...+150
-55...+150
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-247-3-1
(TO-247AC)
G
C
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IL-C2-0512 | LINEAR CCD IMAGE ARRAY |
| IL-C3-0128 | LINEAR CCD IMAGE ARRAY |
| IL-C3-0256 | LINEAR CCD IMAGE ARRAY |
| IL-C3-0512 | LINEAR CCD IMAGE ARRAY |
| IL-C3-1728 | LINEAR CCD IMAGE ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IKW08T120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKW08T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 16A 70W TO247-3 |
| IKW15N120H3 | 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKW15N120H3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 217W TO247-3 |
| IKW15N120H3XK | 制造商:Infineon Technologies AG 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。