參數(shù)資料
型號： IKP03N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 高速2技術(shù)與軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 7/15頁
文件大?。?/td> 431K
代理商： IKP03N120H2
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Power Semiconductors
7
Rev. 2, Mar-04
t
,
S
0A
2A
4A
1ns
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
50
100
150
1ns
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82
,
dynamic test circuit in Fig.E)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
dynamic test circuit in Fig.E)
t
,
S
25°C
50°C
75°C
100°C
125°C
150°C
1ns
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
R
G
= 82
,
dynamic test circuit in Fig.E)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.09mA)
相關(guān)PDF資料
PDF描述
IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKB03N120H2 Tantalum Molded Capacitor; Capacitance: .47uF; Voltage: 35V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel
IKW25T120 TRENCHSTOP SERIES
IKW40T120 LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
IKW50N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKP03N120H2_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKP03N120H2XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO220-3
IKP04N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP04N60T_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP04N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 8A 42W TO220-3
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