參數(shù)資料
型號(hào)： IKB01N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 高速2技術(shù)與軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 1/14頁
文件大小： 384K
代理商： IKB01N120H2
IKB01N120H2
Power Semiconductors
1
Rev. 2.3 May 06
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=1A
Qualified according to JEDEC
2
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
T
j
Marking
Package
IKB01N120H2
1200V
1A
0.09mJ
150°C
K01H1202
P-TO-220-3-45
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector current
T
C
= 25
°
C,
f
= 140kHz
T
C
= 100
°
C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Gate-emitter voltage
V
CE
I
C
1200
3.2
1.3
V
A
I
Cpuls
-
3.5
3.5
I
F
3.2
1.3
V
GE
P
tot
±
20
28
V
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
W
T
j
,
T
stg
-
-40...+150
220
°
C
2
J-STD-020 and JESD-022
G
C
E
P-TO-220-3-45
相關(guān)PDF資料
PDF描述
IKB10N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP10N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB15N60T IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKP04N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKB01P-9/4 制造商:TE Connectivity 功能描述:LEGEND STRIP WHITE/YELLOW
IKB01PW 制造商:TE Connectivity 功能描述:IKC MARKER TYPE IKB 01
IKB02P-9/4 制造商:TE Connectivity 功能描述:LEGEND STRIP WHITE/YELLOW 制造商:TE Connectivity 功能描述:LEGEND STRIP, WHITE/YELLOW
IKB02PW 制造商:TE Connectivity 功能描述:IKC MARKER TYPE IKB 02, sheet of 240
IKB03N120H2 功能描述:IGBT 晶體管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*