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參數(shù)資料
| 型號： | IHW40N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode |
| 中文描述： | 低損耗DuoPack：在TrenchStop IGBT的與反技術(shù)并聯(lián)二極管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 384K |
| 代理商： | IHW40N60T |
Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
Features:
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
TrenchStop and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Soft Switching Series
IHW40N60T
q
Power Semiconductors
1
Rev. 2.2 Apr. 06
Marking
Package
IHW40N60T
600V
40A
1.55V
175
°
C
H40T60
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
600V,
T
j
≤
175
°
C)
Diode forward current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Transient Gate-emitter voltage (
t
p
< 5 ms)
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
600
80
40
V
A
I
Cpuls
-
120
120
I
F
40
20
I
Fpuls
V
GE
60
±
20
±
25
5
V
t
SC
μ
s
P
tot
T
j
T
stg
-
303
W
-40...+175
-55...+175
260
°
C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3-21
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IHW40N60T_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode |
| IHW40T120 | 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 40A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW40T120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series |
| IHW40T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 75A 270W TO247-3 |
| IHW40T60 | 功能描述:IGBT 晶體管 IGBT TrnchStp w/Soft Fast Recovery RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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