參數(shù)資料
型號(hào)： IHW15N120R2
廠商： INFINEON TECHNOLOGIES AG
英文描述： Reverse Conducting IGBT with monolithic body diode
中文描述： 反向開(kāi)展與IGBT的單片體二極管
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 364K
代理商： IHW15N120R2
IHW15N120R2
Soft Switching Series
Power Semiconductors
7
Rev. 1.2 May 06
E
,
S
0A
5A
10A
15A
20A
25A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
E
off
E
,
S
10
20
30
40
50
60
70
0.0mJ
0.3mJ
0.5mJ
0.8mJ
1.0mJ
1.3mJ
1.5mJ
1.8mJ
E
off
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical turn-off energy as a
function of collector current
(inductive load,
T
J
=175°C,
V
CE
=600V, V
GE
=0/15V,
R
G
=14.8
,
Dynamic test circuit in Figure E)
Figure 14. Typical turn-off energy as a
function of gate resistor
(inductive load,
T
J
=175°C,
V
CE
=600V, V
GE
=0/15V,
I
C
=15A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
E
off
E
,
S
400V
500V
600V
700V
800V
900V
0.0mJ
0.5mJ
1.0mJ
1.5mJ
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical turn-off energy as a
function of junction temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=15A,
R
G
=14.8
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical turn-off energy as a
function of collector emitter
voltage
(inductive load,
T
J
=175°C,
V
GE
=0/15V,
I
C
=15A,
R
G
=14.8
,
Dynamic test circuit in Figure E)
相關(guān)PDF資料
PDF描述
IHW15N120R Reverse Conducting IGBT with monolithic body diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW15N120R2XK 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247
IHW15N120R3 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW15N120R3FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 254W TO247-3
IHW15T120 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW15T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 113W TO247-3
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