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參數(shù)資料
| 型號(hào)： | IGW08T120 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Loss IGBT in Trench and Fieldstop technology |
| 中文描述： | 在戴低損失和場終止IGBT技術(shù) |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 302K |
| 代理商： | IGW08T120 |
Preliminary
TrenchStoP Series
IGW08T120
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Power Semiconductors
3
Preliminary / Rev. 1 Sep-03
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
600
36
28
53
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=8A
V
GE
=15V
TO-247AC
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
-
13
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
= 600V,
T
j
= 25
°
C
-
48
-
A
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
40
23
450
70
0.67
0.7
1.37
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=600V,
I
C
=8A,
V
GE
=-15/15V,
R
G
=81
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=39pF
mJ
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
40
26
570
140
1.08
1.2
2.28
-
-
-
-
-
-
-
ns
T
j
=150
°
C
,
V
CC
=600V,
I
C
=8A,
V
GE
=-15/15V,
R
G
= 81
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=39pF
mJ
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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