XMEGA A4U [DATASHEET]
Atmel-8387G-AVR-ATxmega16A4U-34A4U-64A4U-128A4U-Datasheet_03/2014
16
7.8
Data Memory and Bus Arbitration
Since the data memory is organized as four separate sets of memories, the different bus masters (CPU, DMA
controller read and DMA controller write, etc.) can access different memory sections at the same time.
7.9
Memory Timing
Read and write access to the I/O memory takes one CPU clock cycle. A write to SRAM takes one cycle, and a read
from SRAM takes two cycles. For burst read (DMA), new data are available every cycle. EEPROM page load (write)
takes one cycle, and three cycles are required for read. For burst read, new data are available every second cycle.
Refer to the instruction summary for more details on instructions and instruction timing.
7.10
Device ID and Revision
Each device has a three-byte device ID. This ID identifies Atmel as the manufacturer of the device and the device
type. A separate register contains the revision number of the device.
7.11
I/O Memory Protection
Some features in the device are regarded as critical for safety in some applications. Due to this, it is possible to lock
the I/O register related to the clock system, the event system, and the advanced waveform extensions. As long as the
lock is enabled, all related I/O registers are locked and they can not be written from the application software. The lock
registers themselves are protected by the configuration change protection mechanism.
7.12
Flash and EEPROM Page Size
The flash program memory and EEPROM data memory are organized in pages. The pages are word accessible for
the flash and byte accessible for the EEPROM.
Table 7-1 on page 16 shows the Flash Program Memory organization and Program Counter (PC) size. Flash write
and erase operations are performed on one page at a time, while reading the Flash is done one byte at a time. For
Flash access the Z-pointer (Z[m:n]) is used for addressing. The most significant bits in the address (FPAGE) give the
page number and the least significant address bits (FWORD) give the word in the page.
Table 7-1.
Number of words and pages in the flash.
Table 7-2 shows EEPROM memory organization for the Atmel AVR XMEGA A4U devices. EEEPROM write and
erase operations can be performed one page or one byte at a time, while reading the EEPROM is done one byte at a
time. For EEPROM access the NVM address register (ADDR[m:n]) is used for addressing. The most significant bits in
the address (E2PAGE) give the page number and the least significant address bits (E2BYTE) give the byte in the
page.
Devices
PC size
Flash size
Page Size
FWORD
FPAGE
Application
Boot
bits
bytes
words
Size
No of
pages
Size
No of
pages
ATxmega16A4U
14
16K + 4K
128
Z[6:0]
Z[13:7]
16K
64
4K
16
ATxmega32A4U
15
32K + 4K
128
Z[6:0]
Z[14:7]
32K
128
4K
16
ATxmega64A4U
16
64K + 4K
128
Z[6:0]
Z[15:7]
64K
256
4K
16
ATxmega128A4U
17
128K + 8K
256
Z[8:0]
Z[16:7]
128K
512
8K
32