參數(shù)資料
型號(hào)： IDW75E60
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast Switching EmCon Diode
中文描述： 快速開關(guān)快恢復(fù)二極管
文件頁數(shù)： 4/6頁
文件大?。?/td> 168K
代理商： IDW75E60
IDW75E60
Power Semiconductors
4
Rev. 1.1 Mar 06
t
r
,
R
1000A/μs
1500A/μs
0ns
50ns
100ns
150ns
200ns
T
J
=25°C
T
J
=175°C
Q
r
,
R
1000A/μs
1500A/μs
0μC
1μC
2μC
3μC
4μC
5μC
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 5. Typical reverse recovery time as
a function of diode current slope
(
V
R
=400V,
I
F
=75A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 6. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 75A,
Dynamic test circuit in Figure E)
I
r
,
R
1000A/μs
1500A/μs
0A
10A
20A
30A
40A
50A
60A
T
J
=25°C
T
J
=175°C
d
r
/
,
D
O
1000A/μs
1500A/μs
0A/μs
-200A/μs
-400A/μs
-600A/μs
-800A/μs
-1000A/μs
-1200A/μs
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 7. Typical reverse recovery current
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 75A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 8. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(
V
R
=400V,
I
F
=75A,
Dynamic test circuit in Figure E)
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