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參數(shù)資料
| 型號： | IDT7MP4120S25Z |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 32 CMOS STATIC RAM MODULE |
| 中文描述： | 1M X 32 MULTI DEVICE SRAM MODULE, 25 ns, PZMA72 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 83K |
| 代理商： | IDT7MP4120S25Z |
IDT7MP4120
1M x 32
CMOS STATIC RAM MODULE
FEATURES
High-density 4MB Static RAM module
Low profile 72-pin ZIP (Zig-zag In-line vertical Package)
or 72-pin SIMM (Single In-line Memory Module)
Fast access time: 20ns (max.)
Surface mounted plastic components on an epoxy
laminate (FR-4) substrate
Single 5V (
±
10%) power supply
Multiple GND pins and decoupling capacitors for maxi-
mum noise immunity
Inputs/outputs directly TTL-compatible
DESCRIPTION
The IDT7MP4120 is a 1M x 32 Static RAM module con-
structed on an epoxy laminate (FR-4) substrate using 8 1M x
4 Static RAMs in plastic packages. Availability of four chip
select lines (one for each group of two RAMs) provides byte
access. The IDT7MP4120 is available with access time as fast
as 20ns with minimal power consumption.
The IDT7MP4120 is packaged in a 72-pin FR-4 ZIP (Zig-
zag In-line vertical Package)or a 72-pin SIMM (Single In-line
Memory Module). The ZIP configuration allows 72 pins to be
placed on a package 4.05" long and 0.365" wide. At only 0.60"
high, this low-profile package is ideal for systems with mini-
mum board spacing while the SIMM configuration allows use
of edge mounted sockets to secure the module.
All inputs and outputs of the IDT7MP4120 are TTL-com-
patible and operate from a single 5V supply. Full asynchro-
nous circuitry requires no clocks or refresh for operation and
provides equal access and cycle times for ease of use.
Four identification pins (PD
0
, PD
1
, PD
2
and PD
3
) are pro-
vided for applications in which different density versions of the
module are used. In this way, the target system can read the
respective levels of PD
0
, PD
1
, PD
2
and PD
3
to determine a 1M
depth.
The contact pins are plated with 100 micro-inches of nickel
covered by 30 micro-inches minimum of selective gold.
COMMERCIAL TEMPERATURE RANGE
SEPTEMBER 1996
1996 Integrated Device Technology, Inc.
DSC-3019/5
7.07
1
PIN CONFIGURATION
(1)
3019 drw 01
ZIP, SIMM
TOP VIEW
NOTE:
1. Pins 3, 4, 6 and 7 (PD
0
, PD
1
, PD
2
and PD
3
respectively) are read by the
user to determine the density of the module. If PD
0
reads GND, PD
1
reads
NC, PD
2
reads GND and PD
3
reads NC, then the module has a 1M depth.
The IDT logo is a registered trademark of Integrated Device Technology Inc.
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
NC
PD
2
GND
PD
1
I/O
8
I/O
9
I/O
10
I/O
11
A
0
A
1
A
2
I/O
12
I/O
13
I/O
14
I/O
15
GND
A
15
CS
2
CS
4
A
17
OE
I/O
24
I/O
25
I/O
26
I/O
27
A
3
A
4
A
5
V
CC
A
6
I/O
28
I/O
29
I/O
30
I/O
31
A
18
NC
NC
PD
3
PD
0
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
A
7
A
8
A
9
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
14
CS
1
CS
3
A
16
GND
I/O
16
I/O
17
I/O
18
I/O
19
A
10
A
11
A
12
A
13
I/O
20
I/O
21
I/O
22
I/O
23
GND
A
19
NC
PD
0 -
GND
PD
1 -
NC
PD
2 -
GND
PD
3 -
NC
PIN NAMES
I/O
0
–I/O
31
A
0
–A
19
CS
1–
CS
4
Data Inputs/Outputs
Addresses
Chip Selects
Write Enable
Output Enable
Depth Identification
Power
Ground
No Connect
WE
OE
PD
0–
PD
3
V
CC
GND
NC
3019 tbl 01
WE
3019 drw 02
8
20
8
8
8
3
CS
1
CS
2
CS
3
CS
4
A
0
– A
19
I/O
0-7
PD
0
– PD
3
1M x 32
RAM
I/O
8-15
I/O
16-23
I/O
24-31
OE
FUNCTIONAL BLOCK DIAGRAM
Integrated Device Technology, Inc.
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