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參數(shù)資料
| 型號： | IDT7M1014 |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE |
| 中文描述： | 4K的× 36的BiCMOS雙端口靜態(tài)RAM模塊 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | IDT7M1014 |
7.03
4
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, T
A
= –55
°
C to +125
°
C or 0
°
C to +70
°
C)
Symbol
|I
LI
|
Parameter
Test Conditions
V
CC
= Max.
Min.
—
Max.
40
Unit
μ
A
Input Leakage
V
IN
= GND to V
CC
Output Leakage
OE
≥
V
IH
, V
OUT
= GND to V
CC
Output LOW Voltage
Output HIGH Voltage
|I
LO
|
V
CC
= Max.
—
10
μ
A
V
OL
V
OH
V
CC
= Min. I
OL
= 4mA
V
CC
= Min. I
OH
= -4mA
—
2.4
0.4
—
V
V
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, T
A
= –55
°
C to +125
°
C or 0
°
C to +70
°
C)
Symbol
Parameter
I
CC
Operating Current
Test Conditions
Min.
—
Max.
1040
Unit
mA
V
CC
= Max.,
Outputs Open, f = f
MAX
(1)
NOTE:
1. At f=f
MAX
, address and data inputs (except
OE
) are cycling at the maximum frequency of read cycle of 1/tRC, and using “AC TEST CONDITIONS” of
input levels of GND to 3V.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figures 1-3
2819 tbl 08
2819 ttbl 06
2819 tbl 07
Figure 3. Alternate Lumped Capacitive Load,
Typical Derating
+5 V
5 pF*
DATA
OUT
480
255
2819 drw 03
*Including scope and jig.
Figure 1. Output Load
(For tCHZ, tCLZ, tOHZ, tOLZ, tWHZ, tOW)
1
2
3
4
5
6
7
8
20
40
60
80
100
120 140
160 180
200
TAA
(Typical, ns)
CAPACITANCE (pF)
2819 drw 04b
Figure 2. Alternate Output Load
2819 drw 04a
50
DATA
OUT
1.5V
Zo = 50
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