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參數(shù)資料
| 型號： | IDT7M1002S35GB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 16K x 32 CMOS DUAL-PORT STATIC RAM MODULE |
| 中文描述： | 16K X 32 MULTI-PORT DEVICE SRAM MODULE, 35 ns, PMA121 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 166K |
| 代理商： | IDT7M1002S35GB |
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DECEMBER 1995
1996 Integrated Device Technology, Inc.
DSC-2795/5
7.02
1
FEATURES
High-density 512K CMOS Dual-Port RAM module
Fast access times
—Commercial: 30, 35ns
—Military: 40, 45ns
Fully asynchronous read/write operation from either port
Easy to expand data bus width to 64 bits or more using
the Master/Slave function
Separate byte read/write signals for byte control
On-chip port arbitration logic
INT
flag for port-to-port communication
Full on-chip hardware support of semaphore signaling
between ports
Surface mounted fine pitch (25 mil) LCC packages allow
through-hole module to fit into 121 pin PGA footprint
Single 5V (
±
10%) power supply
Inputs/outputs directly TTL-compatible
DESCRIPTION
The IDT7M1002 is a 16K x 32 high-speed CMOS Dual-Port
Static RAM Module constructed on a co-fired ceramic sub-
strate using four 16K x 8 (IDT7006) Dual-Port Static RAMs in
surface-mounted LCC packages. The IDT7M1002 module is
designed to be used as stand-alone 512K Dual-Port RAM or
as a combination Master/Slave Dual-Port RAM for 64-bit or
more word width systems. Using the IDT Master/Slave ap-
proach in such system applications results in full-speed, error-
free operation without the need for additional discrete logic.
The module provides two independent ports with separate
control, address, and I/O pins that permit independent and
asynchronous access for reads or writes to any location in
memory. System performance is enhanced by facilitating
port-to-port communication via additional control signals
SEM
and
INT
.
The IDT7M1002 module is packaged in a ceramic 121 pin
PGA (Pin Grid Array)1.35 inches on a side. Maximum access
times as fast as 30ns are available over the commercial
temperature range and 40ns over the military temperature
range.
All IDT military modules are constructed with semiconduc-
tor components manufactured in compliance with the latest
revision of MIL-STD-883, Class B making them ideally suited
to applications demanding the highest level of performance
and reliability.
16K x 32 CMOS
DUAL-PORT STATIC RAM
MODULE
IDT7M1002
PGA
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
2795 drw 01
L_CS
L_OE
R_OE
R_CS
R_I/O(28)
R_I/O(24)
R_I/O(26)
R_I/O(30)
L_R/W(3)
L_I/O(30)
L_I/O(28)
L_I/O(26)
L_I/O(24)
A
L_I/O(23)
L_R/W(4)
R_I/O(27)
R_I/O(23)
R_I/O(25)
R_I/O(29)
R_I/O(31)
R_A(0)
L_A(0)
L_I/O(31)
L_I/O(29)
L_I/O(27)
L_I/O(25)
B
GND
R_I/O(21)
R_I/O(22)
R_A(3)
R_A(2)
R_A(1)
GND
L_A(1)
L_A(2)
L_A(3)
VCC
L_I/O(22)
L_I/O(21)
C
R_A(4)
R_I/O(19)
R_I/O(20)
GND
L_A(4)
L_I/O(20)
L_I/O(19)
D
R_A(5)
R_I/O(17)
R_I/O(18)
L_A(5)
L_I/O(18)
L_I/O(17)
E
L_SEM
R_SEM
L_I/O(16)
L_A(6)
R_A(6)
R_I/O(16)
F
L_BUSY
L_INT
R_INT
R_BUSY
GND
GND
G
L_A(7)
R_A(7)
R_R/W (2)
R_R/W (1)
L_R/W(1)
L_R/W(2)
H
L_I/O(15)
L_I/O(14)
L_A(8)
R_I/O(15)
R_I/O(14)
R_A(8)
I
L_I/O(13)
L_I/O(12)
L_A(9)
R_I/O(13)
R_A(9)
R_I/O(12)
J
M/S
L_I/O(11)
GND
L_A(10)
R_I/O(11)
VCC
GND
R_A(10)
R_A(11)
R_A(12)
GND
L_A(12)
L_A(11)
K
L_I/O(10)
L_I/O(8)
L_I/O(6)
R_I/O(10)
R_I/O(6)
R_I/O(8)
R_R/W (4)
R_I/O(4)
R_I/O(2)
R_A(13)
L_A(13)
L_I/O(2)
L_I/O(4)
L
L_I/O(9)
L_I/O(7)
L_I/O(5)
R_I/O(9)
R_I/O(5)
R_I/O(7)
R_R/W (3)
R_I/O(3)
R_I/O(1)
R_I/O(0)
L_I/O(0)
L_I/O(1)
L_I/O(3)
M
PIN CONFIGURATION
The IDT logo is a registered trademark of Integrated Device Technology Inc.
Integrated Device Technology, Inc.
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