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參數(shù)資料
| 型號(hào)： | IDT7M1001 |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE |
| 中文描述： | 128K的× 8 64K的× 8的CMOS雙端口靜態(tài)RAM模塊 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | IDT7M1001 |
Integrated Device Technology, Inc.
FEATURES
High-density 1M/512K CMOS Dual-Port Static RAM
module
Fast access times:
—Commercial 35, 40ns
—Military 40, 50ns
Fully asynchronous read/write operation from either port
Full on-chip hardware support of semaphore signaling
between ports
Surface mounted LCC (leadless chip carriers) compo-
nents on a 64-pin sidebraze DIP (Dual In-line Package)
Multiple Vcc and GND pins for maximum noise immunity
Single 5V (
±
10%) power supply
Input/outputs directly TTL-compatible
DESCRIPTION:
The IDT7M1001/IDT7M1003 is a 128K x 8/64K x 8 high-
speed CMOS Dual-Port Static RAM module constructed on a
multilayer ceramic substrate using eight IDT7006 (16K x 8)
Dual-Port RAMs and two IDT FCT138 decoders or depopu-
lated using only four IDT7006s and two decoders.
This module provides two independent ports with separate
control, address, and I/O pins that permit independent and
asynchronous access for reads or writes to any location in
memory. System performance is enhanced by facilitating
port-to-port communication via semaphore (
SEM
) “hand-
shake” signaling. The IDT7M1001/1003 module is designed
to be used as stand-alone Dual-Port RAM where on-chip
hardware port arbitration is not needed. It is the users re-
sponsibility to ensure data integrity when simultaneously
accessing the same memory location from both ports.
The IDT7M1001/1003 module is packaged on a multilayer
co-fired ceramic 64-pin DIP (Dual In-line Package) with di-
mensions of only 3.2" x 0.62" x 0.38". Maximum access times
as fast as 35ns over the commercial temperature range are
available.
All inputs and outputs of the IDT7M1001/1003 are TTL-
compatible and operate from a single 5V supply. Fully asyn-
chronous circuitry is used, requiring no clocks or refreshing for
operation of the module.
All IDT military module semiconductor components are
manufacured in compliance with the latest revision of MIL-
STD-883, Class B, making them ideally suited to applications
demanding the highest level of performance and reliability.
128K x 8
64K x 8
CMOS DUAL-PORT
STATIC RAM MODULE
IDT7M1001
IDT7M1003
Left Port
Right Port
Description
A (0–16)
L
I/O (0–7)
L
R/
W
L
CS
L
A (0–16)
R
I/O (0–7)
R
R/
W
R
CS
R
Address Inputs
Data Inputs/Outputs
Read/Write Enables
Chip Select
Output Enable
Semaphore Control
Power
Ground
OE
L
OE
R
SEM
L
SEM
R
V
CC
GND
2804 tbl 01
PIN CONFIGURATION
(1)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
MARCH 1995
1995 Integrated Device Technology, Inc.
DSC-7066/5
1
7.5
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
PIN NAMES
DIP
TOP VIEW
A
11R
A
12R
A
13R
A
14R
A
15R
A
16R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
A
10R
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
I/O
6R
I/O
7R
V
CC
GND
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
A
12L
A
13L
A
14L
A
15L
A
16L
A
0L
A
1L
I/O
0L
I/O
1L
I/O
2L
I/O
3L
I/O
4L
I/O
5L
I/O
6L
I/O
7L
GND
CS
L
SEM
L
R/
W
L
OE
L
CS
R
SEM
R
R/
W
R
OE
R
29
30
31
32
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
60
59
61
62
63
64
V
CC
GND
GND
2804 drw 01
NOTE:
1. For the IDT7M1003 (64K x 8) version, Pins 23 and 43 must be connected
to GND for proper operation of the module.
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