參數(shù)資料
型號(hào): IDT7282L25PA
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024 x 9
中文描述: 2K X 9 BI-DIRECTIONAL FIFO, 25 ns, PDSO56
封裝: TSSOP-56
文件頁數(shù): 8/12頁
文件大?。?/td> 154K
代理商: IDT7282L25PA
8
COMMERCIAL TEMPERATURE RANGE
IDT7280/7281/7282/7283/7284/7285 5V ASYNCHRONOUS FIFO
DUAL 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
Figure 13. Block Diagram of 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, 4,096 x 18, 8,192 x 18 FIFO Memory Used in Width Expansion Mode
Figure 12. Block Diagram of One 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9, 8,192 x 9 FIFO Used in Single Device Mode
USAGE MODES:
WIDTH EXPANSION
Word width may be increased simply by connecting the corresponding input
control signals of multiple FIFOs. Status flags (
EF
,
FF
and
HF
) can be detected
fromany one FIFO. Figure 13 demonstrates an 18-bit word width by using the
two FIFOs contained in the IDT7280/7281/7282/7283/7284/7285s. Any word
width can be attained by adding FIFOs (Figure 13).
BIDIRECTIONAL OPERATION
Applications which require data buffering between two systems (each
systemcapable of Read and Write operations) can be achieved by pairing
IDT7280/7281/7282/7283/7384/7285s as shown in Figure 16. Both Depth
Expansion and Width Expansion may be used in this mode.
DATA FLOW-THROUGH
Two types of flow-through modes are permtted, a read flow-through
and write flow-through mode. For the read flow-through mode (Figure 17),
the FIFO permts a reading of a single word after writing one word of data into
an empty FIFO. The data is enabled on the bus in (t
WEF
+ t
A
) ns after the rising
edge of
W
, called the first write edge, and it remains on the bus until the
R
line
is raised fromLOW-to-HIGH, after which the bus would go into a three-state
mode after t
RHZ
ns. The
EF
line would have a pulse showing temporary
deassertion and then would be asserted.
In the write flow-through mode (Figure 18), the FIFO permts the writing
of a single word of data immediately after reading one word of data froma
full FIFO. The
R
line causes the
FF
to be deasserted but the
W
line being LOW
causes it to be asserted again in anticipation of a new data word. On the rising
edge of
W
, the new word is loaded in the FIFO. The
W
line must be toggled when
FF
is not asserted to write new data in the FIFO and to increment the write pointer.
COMPOUND EXPANSION
The two expansion techniques described above can be applied together
in a straightforward manner to achieve large FIFO arrays (see Figure 15).
WRITE (
W
)
DATA IN (D)
FULL FLAG (
FF
)
RESET (
RS
)
9
READ (
R
)
9
DATA OUT (Q)
EMPTY FLAG (
EF
)
RETRANSMIT (
RT
)
EXPANSION IN (
XI
)
(
HF
)
FIFO
A or B
IDT
7280
7281
7282
7283
7284
7285
(HALF-FULL FLAG)
3208 drw 14
XIA
XIB
9
9
18
9
18
HFB
HFA
9
DATA
WRITE (
W
)
FULL FLAG (
FFA
)
RESET (
RS
)
(D)
IN
READ (
R
)
EMPTY FLAG (
EFB
)
RETRANSMIT (
RT
)
DATA
(Q)
OUT
3208 drw 15
FIFO A
FIFO B
7280/7281/7282/
7283/7284/7285
相關(guān)PDF資料
PDF描述
IDT7281L20PA CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024 x 9
IDT7281L25PA CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024 x 9
IDT7282 Precision Micropower Shunt Voltage Reference 5-SC70 -40 to 85
IDT7283L12 CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9
IDT7283L12PA CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9
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