參數(shù)資料
型號(hào)： IDT72825LB10PF
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類(lèi)： DRAM
英文描述： CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18
中文描述： 1K X 18 BI-DIRECTIONAL FIFO, 6.5 ns, PQFP128
封裝： TQFP-128
文件頁(yè)數(shù)： 5/26頁(yè)
文件大?。?/td> 334K
代理商： IDT72825LB10PF
5
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72805LB/72815LB/72825LB/72835LB/72845LB CMOS Dual SyncFIFO
TM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
RECOMMENDED DC OPERATING
CONDITIONS
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
Symbol
V
TERM
Rating
Commercial
–0.5 to +7.0
Unit
V
Termnal Voltage
with respect to GND
T
STG
Storage
Temperature
DC Output Current
–55 to +125
°
C
I
OUT
–50 to +50
mA
Symbol
C
IN
(2)
Parameter
(1)
Conditions
Max.
Unit
Input
Capacitance
Output
Capacitance
V
IN
= 0V
10
pF
C
OUT
(1,2)
V
OUT
= 0V
10
pF
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
NOTES:
1. With output deselected, (
OE
≥
V
IH
).
2. Characterized values, not currently tested.
IDT72805LB
IDT72815LB
IDT72825LB
IDT72835LB
IDT72845LB
Coml & Ind’l
(1)
t
CLK
= 10, 15, 25 ns
Typ.
—
—
—
—
Symbol
I
LI
(2)
I
LO
(3)
V
OH
V
OL
Parameter
Input Leakage Current (any input)
Output Leakage Current
Output Logic “1” Voltage, I
OH
= –2 mA
Output Logic “0” Voltage, I
OL
= 8 mA
Mn.
–1
–10
2.4
—
Max.
1
10
—
0.4
Unit
μA
μA
V
V
I
CC1
(4,5,6)
Active Power Supply Current
—
—
100
mA
I
CC2
(4,7)
Standby Current
—
—
10
mA
DC ELECTRICAL CHARACTERISTICS
(Commercial: V
CC
= 5V ± 10%, T
A
= 0
°
C to +70
°
C; Industrial: V
CC
= 5V
±
10%, TA = -40
°
C to +85
°
C)
NOTES:
1
.
Industrial Temperature Range Product for the 15ns speed grade is available as a standard device.
2. Measurements with 0.4
≤
V
IN
≤
V
CC
.
3.
OE
≥
V
IH,
0.4
≤
V
OUT
≤
V
CC
.
4. Tested with outputs open (I
OUT
= 0).
4. RCLK and WCLK toggle at 20 MHZ and data inputs switch at 10 MHz.
5. For the IDT72805LB/72815LB/72825LB the typical I
CC1
= 2[1.81 + 1.12*
S
+ 0.02*C
L
*f
S
] (in mA);
for the IDT72835LB/72845LB the typical I
CC1
= 2[2.85 + 1.30*
S
+ 0.02*C
L
*f
S
] (in mA).
These equations are valid under the following conditions:
V
CC
= 5V, T
A
= 25°C, f
S
= WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at f
S
/2, C
L
= capacitive load (in pF).
7. All Inputs = V
CC
- 0.2V or GND + 0.2V, except RCLK and WCLK, which toggle at 20 MHz.
ABSOLUTE MAXIMUM RATINGS
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS maycause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximumrating
conditions for extended periods may affect reliability.
Symbol
V
CC
GND
V
IH
V
IL
(1)
T
A
Parameter
Mn.
4.5
0
2.0
0
Typ.
5.0
0
Max.
5.5
0
0.8
70
Unit
V
V
V
V
°
C
Supply Voltage (Coml/Indl)
Supply Voltage (Coml/Indl)
Input High Voltage (Coml/Indl)
Input Low Voltage (Coml/Indl)
Operating Temperature
Commercial
Operating Temperature
Industrial
T
A
0
85
°
C
相關(guān)PDF資料
PDF描述
IDT72825LB10PFI CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18
IDT72825LB15BG CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18
IDT72825LB15BGI CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18
IDT72825LB15PF CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18
IDT72825LB15PFI CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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