參數(shù)資料
型號(hào)： IDT723634L12PF8
廠商： IDT, Integrated Device Technology Inc
文件頁(yè)數(shù)： 23/35頁(yè)
文件大?。?/td> 0K
描述： IC FIFO SYNC 512X36X2 128QFP
標(biāo)準(zhǔn)包裝： 1,000
系列： 7200
功能： 同步
存儲(chǔ)容量： 36.8K（512 x 36 x 2）
數(shù)據(jù)速率： 83MHz
訪問(wèn)時(shí)間： 12ns
電源電壓： 4.5 V ~ 5.5 V
工作溫度： 0°C ~ 70°C
安裝類型： 表面貼裝
封裝/外殼： 128-LQFP
供應(yīng)商設(shè)備封裝： 128-TQFP（14x20）
包裝： 帶卷 (TR)
其它名稱： 723634L12PF8
3
COMMERCIALTEMPERATURERANGE
IDT723624/723634/723644 CMOS SyncBiFIFO WITH BUS-MATCHING
256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2
Communication between each port may bypass the FIFOs via two
mailboxregisters.ThemailboxregisterwidthmatchestheselectedPortBbus
width. Each Mailbox register has a flag (
MBF1andMBF2)tosignalwhennew
mail has been stored.
TwokindsofresetareavailableontheseFIFOs:MasterResetandPartial
Reset. Master Reset initializes the read and write pointers to the first location
of the memory array, configures the FIFO for Big- or Little-Endian byte
arrangement and selects serial flag programming, parallel flag programming,
or one of three possible default flag offset settings, 8, 16 or 64. There are two
Master Reset pins,
MRS1 and MRS2.
PartialResetalsosetsthereadandwritepointerstothefirstlocationofthe
memory. Unlike Master Reset, any settings existing prior to Partial Reset (i.e.,
programmingmethodandpartialflagdefaultoffsets)areretained.PartialReset
is useful since it permits flushing of the FIFO memory without changing any
configuration settings. Each FIFO has its own, independent Partial Reset pin,
PRS1 and PRS2.
These devices have two modes of operation: In the IDT Standard mode,
the first word written to an empty FIFO is deposited into the memory array. A
read operation is required to access that word (along with all other words
residing in memory). In the First Word Fall Through mode (FWFT), the first
long-word(36-bitwide)writtentoanemptyFIFOappearsautomaticallyonthe
outputs, no read operation is required (nevertheless, accessing subsequent
words does necessitate a formal read request). The state of the BE/
FWFTpin
during FIFO operation determines the mode in use.
Each FIFO has a combined Empty/Output Ready Flag (
EFA/ORA and
EFB/ORB) and a combined Full/Input Ready Flag (FFA/IRA and FFB/IRB).
The
EFandFFfunctionsareselectedintheIDTStandardmode.EFindicates
whether or not the FIFO memory is empty.
FF shows whether the memory is
full or not. The IR and OR functions are selected in the First Word Fall Through
mode. IR indicates whether or not the FIFO has available memory locations.
OR shows whether the FIFO has data available for reading or not. It marks the
presence of valid data on the outputs.
Each FIFO has a programmable Almost-Empty flag (
AEAandAEB)and
aprogrammableAlmost-Fullflag(
AFAandAFB). AEAandAEB indicatewhen
aselectednumberofwordsremainintheFIFOmemory.
AFAandAFBindicate
when the FIFO contains more than a selected number of words.
FFA/IRA,FFB/IRB,AFAandAFBaretwo-stagesynchronizedtotheport
clock that writes data into its array.
EFA/ORA, EFB/ORB, AEA and AEB are
two-stage synchronized to the port clock that reads data from its array.
Programmableoffsetsfor
AEA,AEB,AFAandAFBareloaded inparallelusing
Port A or in serial via the SD input. The Serial Programming Mode pin (
SPM)
makes this selection. Three default offset settings are also provided. The
AEA
and
AEBthresholdcanbesetat8,16or64locationsfromtheemptyboundary
and the
AFAandAFBthresholdcanbesetat8,16or64locationsfromthefull
boundary. All these choices are made using the FS0 and FS1 inputs during
Master Reset.
Two or more devices may be used in parallel to create wider data
paths. If, at any time, the FIFO is not actively performing a function, the chip
will automatically power down. During the power down state, supply current
consumption (ICC) is at a minimum. Initiating any operation (by activating
control inputs) will immediately take the device out of the power down state.
The IDT723624/723634/723644 are characterized for operation from
0°C to 70°C. Industrial temperature range (-40
°Cto+85°C)isavailable.They
are fabricated using IDT’s high speed, submicron CMOS technology.
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