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| 型號(hào)： | IDT7202LA25L |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| 中文描述： | 1K X 9 OTHER FIFO, 25 ns, CQCC32 |
| 封裝： | LCC-32 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 153K |
| 代理商： | IDT7202LA25L |
5.09
4
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT72021, IDT72031, IDT72041
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9
DC ELECTRICAL CHARACTERISTICS — IDT72021
(Commercial: V
CC
= 5.0V
±
10%, T
A
= 0
°
C to +70
°
C; Military: V
CC
= 5V
±
10%, T
A
= –55
°
C to +125
°
C)
IDT72021
Commercial
t
A
=25,35ns
Symbol
Parameter
Min.
Typ.
I
LI(1)
Input Leakage Current
–1
—
(Any Input)
I
LO(2)
Output Leakage Current
–10
—
V
OH
Output Logic “1” Voltage
2.4
—
I
OH
= –2mA
V
OL
Output Logic “0” Voltage
—
—
I
OL
= 8mA
I
CC1(3,4)
Active Power Supply
—
—
Current
I
CC2(3)
Standby Current
—
—
(
R
=
W
=
RS
=
FL
/
RT
= V
IH
)
I
CC3(3)
Power Down Current
—
—
(All Input = V
CC
– 0.2V)
IDT72021
Military
t
A
=30,40ns
Min.
–10
IDT72021
Commercial
t
A
=50ns
Min.
Typ.
–1
IDT72021
Military
t
A
=50ns
Min.
–10
Max.
1
Typ.
—
Max.
10
Max.
1
Typ.
—
Max.
10
Unit
μ
A
—
10
—
–10
2.4
—
—
10
—
–10
2.4
—
—
10
—
–10
2.4
—
—
10
—
μ
A
V
0.4
—
—
0.4
—
—
0.4
—
—
0.4
V
120
—
—
140
—
50
80
—
70
100
mA
12
—
—
20
—
5
8
—
8
15
mA
500
—
—
900
—
—
500
—
—
900
μ
A
2677 tbl 06
DC ELECTRICAL CHARACTERISTICS — IDT72031, IDT72041
(Commercial: V
CC
= 5.0V
±
10%, T
A
= 0
°
C to +70
°
C; Military: V
CC
= 5V
±
10%, T
A
= –55
°
C to +125
°
C)
IDT72031
IDT72041
Commercial
t
A
=35,50ns
Min.
Typ.
IDT72031
IDT72041
Military
t
A
=40,50ns
Min.
Typ.
Symbol
I
LI(1)
I
LO(2)
Parameter
Max.
Max.
Unit
μ
A
μ
A
V
Input Leakage Current (Any Input)
–1
—
1
–10
—
10
Output Leakage Current
–10
—
10
–10
—
10
V
OH
Output Logic “1” Voltage I
OUT
= –2mA
2.4
—
—
2.4
—
—
V
OL
I
CC1(3,5)
I
CC2(3)
I
CC3(3)
Output Logic “0” Voltage I
OUT
= 8mA
—
—
0.4
—
—
0.4
V
Active Power Supply Current
—
75
120
—
100
150
mA
Standby Current (
R
=
W
=
RS
=
FL
/
RT
= V
IH
)
—
8
12
—
12
25
mA
Power Down Current (All Input = V
CC
– 0.2V)
—
—
2
—
—
4
mA
NOTES:
1. Measurements with 0.4
≤
V
IN
≤
V
CC
.
2.
R
≥
V
IH
, 0.4
≤
V
OUT
≤
V
CC
.
3. I
CC
measurements are made with
OE
= HIGH.
4. Tested at f = 20MHz.
5. Tested at f = 15.3 MHz.
2677 tbl 07
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