- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377347 > IDT71V416L10YG (INTEGRATED DEVICE TECHNOLOGY INC) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) PDF資料下載
參數(shù)資料
| 型號(hào)： | IDT71V416L10YG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) |
| 中文描述： | 256K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-44 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 90K |
| 代理商： | IDT71V416L10YG |
6.42
IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges
7
T iming Waveform of Write Cycle No. 2 (
CS
Controlled T iming)
(1,3)
NOTES:
1. A write occurs during the overlap of a LOW
CS
, LOW
BHE
or
BLE
, and a LOW
WE
.
2. During this period, I/O pins are in the output state, and input signals must not be applied.
3. If the
CS
LOW or
BHE
and
BLE
LOW transition occurs simultaneously with or after the
WE
LOW transition, the outputs remain in a high-impedance state.
T iming Waveform of Write Cycle No. 3
(
BHE
,
BLE
Controlled T iming)
(1,3)
ADDRESS
CS
DATA
IN
3624 drw 09
DATA
IN
VALID
t
WC
t
AS
(2)
t
CW
t
WR
WE
t
AW
DATA
OUT
t
DW
t
DH
BHE, BLE
t
BW
t
WP
ADDRESS
CS
DATA
IN
3624 drw 10
DATA
IN
VALID
t
WC
t
AS
(2)
t
CW
t
WR
WE
t
AW
DATA
OUT
t
DW
t
DH
BHE, BLE
t
BW
t
WP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT71V416L12BEG | 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) |
| IDT71V416L12BEGI | 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) |
| IDT71V416L12PHG | 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) |
| IDT71V416L12PHGI | 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) |
| IDT71V416L12YG | 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71V416L10YG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4MBIT 10NS 44SOJ |
| IDT71V416L10YGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4MBIT 10NS 44SOJ |
| IDT71V416L10YGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4MBIT 10NS 44SOJ |
| IDT71V416L10YI | 功能描述:IC SRAM 4MBIT 10NS 44SOJ RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| IDT71V416L10YI8 | 功能描述:IC SRAM 4MBIT 10NS 44SOJ RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。