參數資料
型號: IDT71V416L10BEGI
廠商: Integrated Device Technology, Inc.
英文描述: 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
中文描述: 3.3V的CMOS靜態(tài)RAM 4梅格(256K x 16位)
文件頁數: 3/9頁
文件大小: 90K
代理商: IDT71V416L10BEGI
6.42
IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges
3
Absolute Maximum Ratings
(1)
Recommended Operating
Temperature and Supply
Voltage
Recommended DC Operating
Conditions
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
NOTES:
1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
2. VIL (mn.) = –2V for pulse width less than 5ns, once per cycle.
Truth Table
(1)
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't care.
Symbol
Rating
Value
Unit
V
DD
Supply Voltage Relative to V
SS
-0.5 to +4.6
V
V
IN,
V
OUT
Terminal Voltage Relative to
V
SS
-0.5 to V
DD
+0.5
V
T
BIAS
Temperature Under Bias
-55 to +125
o
C
T
STG
Storage Temperature
-55 to +125
o
C
P
T
Power Dissipation
1
W
I
OUT
DC Output Current
50
mA
3624 tbl 04
Grade
Temperature
V
SS
V
DD
Commercial
0
O
C to +70
O
C
0V
See Below
Industrial
–40
O
C to +85
O
C
0V
See Below
3624 tbl 05
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Supply Voltage
3.0
3.3
3.6
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
2.0
____
V
DD
+0.3
(1)
V
V
IL
Input Low Voltage
-0.3
(2)
____
0.8
V
3624 tbl 06
CS
OE
WE
BLE
BHE
I/O
0-
I/O
7
I/O
8-
I/O
15
Function
H
X
X
X
X
High-Z
High-Z
Deselected - Standby
L
L
H
L
H
DATA
OUT
High-Z
Low Byte Read
L
L
H
H
L
High-Z
DATA
OUT
High Byte Read
L
L
H
L
L
DATA
OUT
DATA
OUT
Word Read
L
X
L
L
L
DATA
IN
DATA
IN
Word Write
L
X
L
L
H
DATA
IN
High-Z
Low Byte Write
L
X
L
H
L
High-Z
DATA
IN
High Byte Write
L
H
H
X
X
High-Z
High-Z
Outputs Disabled
L
X
X
H
H
High-Z
High-Z
Outputs Disabled
3624 tbl 03
相關PDF資料
PDF描述
IDT71V416L10PHG Power Resistor; Series:MP900; Resistance:2kohm; Resistance Tolerance:+/- 1 %; Power Rating:30W; Voltage Rating:250V; Temperature Coefficient:-20 to +80 ppm; Package/Case:TO-220; Leaded Process Compatible:Yes
IDT71V416L10PHGI 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416L10YG 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416L12BEG 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416L12BEGI 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
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IDT71V416L10BEI8 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M(64M x 8) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
IDT71V416L10PH 功能描述:IC SRAM 4MBIT 10NS 44TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M(64M x 8) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
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