參數(shù)資料
    型號: IDT71V2578YS133PF
    廠商: INTEGRATED DEVICE TECHNOLOGY INC
    元件分類: DRAM
    英文描述: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
    中文描述: 256K X 18 CACHE SRAM, 4.2 ns, PQFP100
    封裝: 14 X 20 MM, PLASTIC, TQFP-100
    文件頁數(shù): 1/22頁
    文件大?。?/td> 282K
    代理商: IDT71V2578YS133PF
    JUNE 2003
    DSC-4876/09
    1
    2003 Integrated Device Technology, Inc.
    Features
    N
    128K x 36, 256K x 18 memory configurations
    N
    Supports high system speed:
    Commercial and Industrial:
    – 150MHz 3.8ns clock access time
    – 133MHz 4.2ns clock access time
    N
    LBO
    input selects interleaved or linear burst mode
    N
    Self-timed write cycle with global write control (
    GW
    ), byte write
    enable (
    BWE
    ), and byte writes (
    BW
    x)
    N
    3.3V core power supply
    N
    Power down controlled by ZZ input
    N
    2.5V I/O
    N
    Optional - Boundary Scan JTAG Interface (IEEE 1149.1
    compliant)
    N
    Packaged in a JEDEC Standard 100-pin plastic thin quad
    flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
    grid array (fBGA)
    Description
    The IDT71V2576/78 are high-speed SRAMs organized as 128K x
    36/256K x 18. The IDT71V2576/78 SRAMs contain write, data, address
    and control registers. Internal logic allows the SRAMto generate a self-
    timed write based upon a decision which can be left until the end of the write
    cycle.
    The burst mode feature offers the highest level of performance to the
    systemdesigner, as the IDT71V2576/78 can provide four cycles of data
    for a single address presented to the SRAM. An internal burst address
    counter accepts the first cycle address fromthe processor, initiating the
    access sequence. The first cycle of output data will be pipelined for one
    cycle before it is available on the next rising clock edge. If burst mode
    operation is selected (
    ADV
    =LOW), the subsequent three cycles of output
    data will be available to the user on the next three rising clock edges. The
    order of these three addresses are defined by the internal burst counter
    and the
    LBO
    input pin.
    The IDT71V2576/78 SRAMs utilize IDT’s latest high-performance
    CMOS process and are packaged in a JEDEC standard 14mmx 20mm
    100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
    (BGA) and 165 fine pitch ball grid array (fBGA).
    Pin Description Summary
    NOTE:
    1.
    BW
    3
    and
    BW
    4
    are not applicable for the IDT71V2578.
    A
    0
    -A
    17
    Address Inputs
    Input
    Synchronous
    CE
    Chip Enable
    Input
    Synchronous
    CS
    0
    ,
    CS
    1
    Chip Selects
    Input
    Synchronous
    OE
    Output Enable
    Input
    Asynchronous
    GW
    Global Write Enable
    Input
    Synchronous
    BWE
    Byte Write Enable
    Input
    Synchronous
    BW
    1
    ,
    BW
    2
    ,
    BW
    3
    ,
    BW
    4
    (1)
    Individual Byte Write Selects
    Input
    Synchronous
    CLK
    Clock
    Input
    N/A
    ADV
    Burst Address Advance
    Input
    Synchronous
    ADSC
    Address Status (Cache Controller)
    Input
    Synchronous
    ADSP
    Address Status (Processor)
    Input
    Synchronous
    LBO
    Linear / Interleaved Burst Order
    Input
    DC
    TMS
    Test Mode Select
    Input
    Synchronous
    TDI
    Test Data Input
    Input
    Synchronous
    TCK
    Test Clock
    Input
    N/A
    TDO
    Test Data Output
    Output
    Synchronous
    TRST
    JTAG Reset (Optional)
    Input
    Asynchronous
    ZZ
    Sleep Mode
    Input
    Asynchronous
    I/O
    0
    -I/O
    31
    , I/O
    P1
    -I/O
    P4
    Data Input / Output
    I/O
    Synchronous
    V
    DD
    , V
    DDQ
    Core Power I/O Power
    Supply
    N/A
    V
    SS
    Ground
    Supply
    N/A
    4876 tbl 01
    128K X 36, 256K X 18
    3.3V Synchronous SRAMs
    2.5V I/O, Pipelined Outputs,
    Burst Counter, Single Cycle Deselect
    IDT71V2576S
    IDT71V2578S
    IDT71V2576SA
    IDT71V2578SA
    相關PDF資料
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    IDT71V2578YS133PFI 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
    IDT71V2578YS150BG 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
    IDT71V2578YS150BGI 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
    IDT71V2578YS150BQ 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
    IDT71V2578YS150BQI 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
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