參數(shù)資料
型號(hào): IDT71V2576SA133BGI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
中文描述: 128K X 36 CACHE SRAM, 4.2 ns, PBGA119
封裝: BGA-119
文件頁(yè)數(shù): 5/22頁(yè)
文件大?。?/td> 282K
代理商: IDT71V2576SA133BGI
6.42
IDT71V2576, IDT71V2578, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
13
NOTES:
1.
O1
(Ax)
represents
the
first
output
from
the
external
address
Ax.
O1
(Ay)
represents
the
first
output
from
the
external
addr
ess
Ay;
O2
(Ay)
represents
the
next
output
data
in
the
burst
sequence
of
the
base
address
Ay,
etc.
where
A0
and
A1
are
advancing
for
the
four
word
burst
in
the
sequence
defined
by
the
state
of
the
LBO
input.
2.
ZZ
input
is
LOW
and
LBO
is
Don't
Care
for
this
cycle.
3.
C
S
0timing
transitions
are
identical
but
inverted
to
the
CE
and
CS
1
signals.
For
example,
when
CE
and
CS
1are
LOW
on
this
waveform,
CS
0is
HIGH.
Timing Waveform of Pipeline Read Cycle(1,2)
tC
H
Z
tS
A
tS
C
tH
S
G
W
,B
W
E,
BW
x
tS
W
tC
L
tS
A
V
tH
W
tH
A
V
C
LK
A
D
S
C
(1
)
A
D
R
E
S
tC
Y
C
tC
H
tH
A
tH
C
tO
E
tO
H
Z
O
E
tC
D
tO
LZ
O
1(
A
x)
D
A
TA
O
U
T
tC
D
C
O
1(
A
y)
O
3(
A
y)
O
2(
A
y)
O
2(
A
y)
tC
LZ
A
D
V
C
E
,C
S
1
(N
ot
e
3)
P
ipeli
n
e
d
R
ead
B
urs
t
P
ipeli
n
e
d
R
ea
d
O
utp
u
t
D
isab
le
d
A
x
A
y
tS
S
O
1(
A
y)
(B
ur
st
w
ra
p
s
ar
ou
nd
to
it
s
in
it
ial
s
tat
e
)
O
4(
A
y)
48
76
dr
w
08
A
D
S
P
A
D
V
H
IG
H
su
sp
e
n
d
s
bu
rs
t
,
相關(guān)PDF資料
PDF描述
IDT71V2576SA133BQ 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
IDT71V2576SA133BQI 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT71V2576YS150PF 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 ZBT 存儲(chǔ)容量:4.5M(128K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA(14x22) 包裝:托盤 其它名稱:71V3557SA75BGI
IDT71V2576YS150PF8 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 ZBT 存儲(chǔ)容量:4.5M(128K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA(14x22) 包裝:托盤 其它名稱:71V3557SA75BGI
IDT71V2576YS150PFG 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 ZBT 存儲(chǔ)容量:4.5M(128K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA(14x22) 包裝:托盤 其它名稱:71V3557SA75BGI
IDT71V2576YS150PFG8 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 ZBT 存儲(chǔ)容量:4.5M(128K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA(14x22) 包裝:托盤 其它名稱:71V3557SA75BGI
IDT71V2578S133BGGI 制造商:INT-DEV 功能描述: