參數(shù)資料
型號(hào): IDT71P74604S250BQ
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: 18Mb Pipelined QDR II SRAM Burst of 4
中文描述: 512K X 36 QDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù): 4/22頁(yè)
文件大?。?/td> 592K
代理商: IDT71P74604S250BQ
6.42
IDT71P74204 (2M x 8-Bit), 71P74104 (2M x 9-Bit), 71P74804 (1M x 18-Bit) 71P74604 (512K x 36-Bit) Advance Information
18 Mb QDR II SRAM Burst of 4 Commercial Temperature Range
Symbol
Pin Function
Description
Doff
Input
DLL Turn Off. When low this input will turn off the DLL inside the device. The AC timngs wth
the DLL turned off will be different fromthose listed in this data sheet. There will be an
increased propagation delay fromthe incidence of C and
C
to Q, or K and
K
to Q as
configured. The propagation delay is not a tested parameter but will be simlar to the
propagation delay of other SRAMdevices in this speed grade.
TDO
Output
TDO pin for JTAG.
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG. An internal resistor will pull TDI to V
DD
when the pin is unconnected.
TMS
Input
TMS pin for JTAG. An internal resistor will pull TMS to V
DD
when the pin is unconnected.
NC
No Connect
No connects inside the package. Can be tied to any voltage level
V
REF
Input
Reference
Reference Voltage input. Static input used to set the reference level for HSTL inputs and
Outputs as well as AC measurement points.
V
DD
Power
Supply
Power supply inputs to the core of the device. Should be connected to a 1.8V power
supply.
V
SS
Ground
Ground for the device. Should be connected to ground of the system
V
DDQ
Power
Supply
Power supply for the outputs of the device. Should be connected to a 1.5V power supply
for HSTL or scaled to the desired output voltage.
6111 tbl 02b
Pin Definitions continued
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IDT71P74604S250BQ8 功能描述:IC SRAM 18MBIT 250MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA(7x7) 包裝:托盤(pán)
IDT71P74604S250BQG 功能描述:IC SRAM 18MBIT 250MHZ 165FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA(7x7) 包裝:托盤(pán)
IDT71P74604S250BQG8 功能描述:IC SRAM 18MBIT 250MHZ 165FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA(7x7) 包裝:托盤(pán)
IDT71P74804S167BQ 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA(7x7) 包裝:托盤(pán)
IDT71P74804S167BQ8 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA(7x7) 包裝:托盤(pán)