- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377315 > IDT71342SA70PF (INTEGRATED DEVICE TECHNOLOGY INC) 200V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail PDF資料下載
參數(shù)資料
| 型號： | IDT71342SA70PF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 200V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail |
| 中文描述： | 4K X 8 DUAL-PORT SRAM, 70 ns, PQFP64 |
| 封裝： | PLASTIC, TQFP-64 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 144K |
| 代理商： | IDT71342SA70PF |
IDT71342SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
COMMERCIAL TEMPERATURE RANGE
6.05
2
RECOMMENDED DC OPERATING CONDITIONS
Symbol
V
CC
GND
Parameter
Supply Voltage
Ground
Min.
4.5
0
Typ.
5.0
0
Max.
5.5
0
Unit
V
V
V
IH
V
IL
Input High Voltage
Input Low Voltage
2.2
—
—
6.0
(2)
0.8
V
V
–0.5
(1)
NOTES:
1. V
IL
(min.) > -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
2721 tbl 04
CAPACITANCE
(1)
(T
A
= +25
°
C, f = 1.0MHz) TQFP Only
Symbol
Parameter
Conditions
(2)
Max.
Unit
C
IN
C
OUT
Input Capacitance
Output Capacitance
V
IN
= 3dV
V
OUT
= 3dV
9
10
pF
pF
NOTES:
1. This parameter is determined by device characterization but is not
production tested.
2. 3dv references the interpolated capacitance when the input and output
signals switch from 0V to 3V and from 3V to 0V.
2721 tbl 02
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Temperature
0
°
C to +70
°
C
Grade
Commercial
GND
0V
V
CC
5.0V
±
10%
2721 tbl 03
PIN CONFIGURATIONS
(1,2)
NOTES:
1. All Vcc pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. This text does not indicate orientation of the actual part-marking.
2721 drw 02
IDT71342
J52-1
PLCC
TOP VIEW
INDEX
N
G
I
4
I
5
I
6
I
7
I
0
I
1
I
2
I
3
I
4
I
5
I
6
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
N/C
I/O
7R
46
45
44
43
42
41
40
39
38
37
36
35
34
I/O
3L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
8
9
10
11
12
13
14
15
16
17
18
19
20
47
48
49
50
51
52
1
2
3
4
5
6
7
33
32
31
30
29
28
27
26
25
24
23
22
21
S
L
A
0
V
C
O
L
R
W
L
C
R
R
W
R
C
L
A
1
A
1
A
1
(3)
A
1
S
R
INDEX
71342
PN64-1
64-PIN TQFP
TOP VIEW
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
46
45
44
43
42
41
40
39
38
37
36
35
34
33
47
48
1
1
1
2
3
3
3
2
2
2
2
2
2
2
2
2
4
5
5
5
6
6
6
6
5
5
5
5
5
5
5
6
I/O
6R
N/C
A
7R
A
8R
A
9R
N/C
N/C
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
I/O
7R
OE
R
I/O
2L
A
0L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
N/C
OE
L
A
7L
A
8L
A
9L
N/C
I/O
0L
I/O
1L
I
4
I
5
I
6
I
7
I
0
I
1
I
2
I
3
I
4
I
5
I
3
N
N
G
N
N
A
1
V
C
C
R
C
L
N
N
A
1
N
N
N
A
1
A
1
2721 drw 03
S
L
R
W
L
S
R
(3)
R
W
R
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Com’l.
Mil.
Unit
V
TERM
(2)
Terminal Voltage
with Respect
to Ground
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
–0.5 to +7.0
–0.5 to +7.0
V
0 to +70
–55 to +125
°
C
–55 to +125
–65 to +135
°
C
–55 to +125
–65 to +150
°
C
P
T
(3)
Power Dissipation
1.5
1.5
W
I
OUT
DC Output Current
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25%of the cycle time or
10 ns maximum, and is limited to < 20mA for the period of V
TERM
> Vcc
+0.5V.
2721 tbl 01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7134LA20CI | HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM |
| IDT7134LA20FI | HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM |
| IDT7134LA20JI | HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM |
| IDT7134LA20L48I | HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM |
| IDT7134LA20PI | HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7134LA20J | 功能描述:IC SRAM 32KBIT 20NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7134LA20J8 | 功能描述:IC SRAM 32KBIT 20NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7134LA20JG | 功能描述:IC SRAM 32KBIT 20NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7134LA20JG8 | 功能描述:IC SRAM 32KBIT 20NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7134LA20P | 功能描述:IC SRAM 32KBIT 20NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。