參數(shù)資料
型號: IDT71342LA70J
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: 300V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
中文描述: 4K X 8 DUAL-PORT SRAM, 70 ns, PQCC52
封裝: PLASTIC, LCC-52
文件頁數(shù): 7/13頁
文件大?。?/td> 144K
代理商: IDT71342LA70J
6.05
7
IDT71342SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
COMMERCIAL TEMPERATURE RANGE
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(5)
71342X20
71342X25
71342X35
Symbol
WRITE CYCLE
t
WC
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
20
25
35
ns
t
EW
15
20
30
ns
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
t
WZ
t
OW
t
SWR
t
SPS
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enabled to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
SEM Flag Write to Read Time
SEM Flag Contention Window
15
0
15
0
15
0
3
10
10
15
15
20
0
20
0
15
0
3
10
10
15
15
30
0
25
0
20
3
3
10
10
20
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2721 tbl 11
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(5)
(CONT'D)
71342X45
71342X55
71342X70
Symbol
WRITE CYCLE
t
WC
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
45
55
70
ns
t
EW
40
50
60
ns
t
AW
t
AS
t
WP
t
WR
t
DW
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enabled to Output in High-Z
(1, 2)
40
0
40
0
20
50
0
50
0
25
60
0
60
0
30
ns
ns
ns
ns
ns
t
HZ
20
25
30
ns
t
DH
3
3
3
ns
t
WZ
20
25
30
ns
t
OW
Output Active from End-of-Write
(1, 2, 4)
3
3
3
ns
t
SWR
t
SPS
SEM Flag Write to Read Time
SEM Flag Contention Window
10
10
10
10
10
10
ns
ns
2721 tbl 12
NOTES:
1. Transition is measured
±
500mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM,
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL.
Either condition must be valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. “X” in part number indicates power rating (SA or LA).
相關PDF資料
PDF描述
IDT71342LA70PF 650V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
IDT71342SA HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
IDT71342SA20J HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
IDT71342SA20PF HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
IDT71342SA25J HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
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