參數(shù)資料
型號: IDT71342LA55J
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
中文描述: 4K X 8 DUAL-PORT SRAM, 55 ns, PQCC52
封裝: PLASTIC, LCC-52
文件頁數(shù): 6/13頁
文件大小: 144K
代理商: IDT71342LA55J
IDT71342SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
COMMERCIAL TEMPERATURE RANGE
6.05
6
TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE
(1, 2, 4, 6)
NOTES:
1. Write cycle parameters should be adhered to, in order to ensure proper writing.
2.
CE
L =
CE
R =
V
IL.
CE
"B"
= V
IL.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
t
AA or
t
SAA
ADDRESS
DATA
OUT
PREVIOUS DATA VALID
DATA VALID
t
OH
t
OH
t
RC
2721 drw 07
2721 drw 08
CE
or
SEM
DATA
OUT
VALID DATA
t
PD
t
AOE
t
ACE
OE
t
HZ
t
LZ
t
LZ
t
PU
50%
50%
I
CC
I
SB
CURRENT
t
HZ
t
SOP
(5)
t
SOP
(1)
(1)
(4)
(2)
(2)
(4)
2721 drw 09
R/
W
"A"
VALID
t
WC
MATCH
VALID
MATCH
t
WP
t
DW
t
WDD
t
DDD
ADDR
"A"
DATA
IN "A"
DATA
OUT "B"
ADDR
"B"
(1)
t
DH
TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE
(1, 3)
TIMING WAVEFORM OF WRITE WITH PORT-TO-PORT READ
(1, 2)
NOTES:
1. Timing depends on which signal is asserted last,
OE
or
CE
.
2. Timing depends on which signal is de-asserted first,
OE
or
CE
.
3. R/
W
= V
IH
and address is valid prior to or coincident with
CE
transition Low.
4. Start of valid data depends on which timing becomes effective last; t
AOE
, t
ACE
, or t
AA.
5. To access RAM,
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. t
AA
is for RAM Address Access and t
SAA
is for Semaphore
Address Access.
6. R/
W
= V
IH
,
CE
= V
IL
, and
OE
= V
IL
. Address is valid prior to or coincident with
CE
transition Low.
相關(guān)PDF資料
PDF描述
IDT71342LA55PF 300V N-Channel MOSFET
IDT71342LA70J 300V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
IDT71342LA70PF 650V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
IDT71342SA HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
IDT71342SA20J HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT71342LA55J8 功能描述:IC SRAM 32KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT71342LA55PF 功能描述:IC SRAM 32KBIT 55NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz,400kHz 接口:I²C,2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
IDT71342LA55PF8 功能描述:IC SRAM 32KBIT 55NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT71342LA70J 功能描述:IC SRAM 32KBIT 70NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT71342LA70J8 功能描述:IC SRAM 32KBIT 70NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)